参数资料
型号: NAND512R3A2CV6E
厂商: STMICROELECTRONICS
元件分类: PROM
英文描述: 64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
封装: 12 X 17 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, PLASTIC, USOP-48
文件页数: 21/56页
文件大小: 951K
代理商: NAND512R3A2CV6E
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
28/56
Table 11. Status Register Bits
Read Electronic Signature
The device contains a Manufacturer Code and De-
vice Code. To read these codes two steps are re-
quired:
1.
first use one Bus Write cycle to issue the Read
Electronic Signature command (90h), followed
by an address input of 00h.
2.
then perform two Bus Read operations – the
first will read the Manufacturer Code and the
second, the Device Code. Further Bus Read
operations will be ignored.
mation on the addresses.
Table 12. Electronic Signature
Bit
Name
Logic Level
Definition
SR7
Write Protection
'1'
Not Protected
'0'
Protected
SR6
Program/ Erase/ Read
Controller
'1'
P/E/R C inactive, device ready
'0'
P/E/R C active, device busy
SR5, SR4,
SR3, SR2, SR1
Reserved
Don’t Care
SR0
Generic Error
‘1’
Error – operation failed
‘0’
No Error – operation successful
Part Number
Manufacturer
Code
Device code
NAND128W3A
20h
73h
NAND256R3A
20h
35h
NAND256W3A
75h
NAND256R4A
0020h
0045h
NAND256W4A
0055h
NAND512R3A
20h
36h
NAND512W3A
76h
NAND512R4A
0020h
0046h
NAND512W4A
0056h
NAND01GR3A
20h
39h
NAND01GW3A
79h
NAND01GR4A
0020h
0049h
NAND01GW4A
0059h
相关PDF资料
PDF描述
NAND128W4A2CZA6E 8M X 16 FLASH 3V PROM, 35 ns, PBGA55
NAND128R4A2BZA6E 8M X 16 FLASH 1.8V PROM, 35 ns, PBGA55
NAND256R4A0DN6T 16M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND256R4A2DZA1F 16M X 16 FLASH 1.8V PROM, 15000 ns, PBGA63
NAND256W3A1BZA1E 32M X 8 FLASH 3V PROM, 12000 ns, PBGA63
相关代理商/技术参数
参数描述
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