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参数资料
型号： NAND512R4A1AV6
厂商： NUMONYX
元件分类： PROM
英文描述： 32M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48
封装： 12 X 17 MM, PLASTIC, WSOP-48
文件页数： 51/56页
文件大小： 882K
代理商： NAND512R4A1AV6
55/56
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
RELATED DOCUMENTATION
STMicroelectronics has published a set of application notes to support the NAND Flash memories. They
are available from the ST Website
www.st.com. or from your local ST Distributor.
REVISION HISTORY
Table 29. Document Revision History
Date
Version
Revision Details
06-Jun-2003
1.0
First Issue
07-Aug-2003
2.0
Design Phase
27-Oct-2003
3.0
Engineering Phase
03-Dec-2003
4.0
Document promoted from Target Specification to Preliminary Data status.
VCC changed to VDD and ICC to IDD.
Title of Table 2.. changed to “Product Description” and Page Program Typical Timing
for NANDXXXR3A devices corrected. Table 1., Product List, inserted on page 2.
13-Apr-2004
5.0
WSOP48 and VFBGA55 packages added, VFBGA63 (9 x 11 x 1mm) removed.
Figure 19., Cache Program Operation, modified and note 2 modified. Note removed
for tWLWH timing in Table 20., AC Characteristics for Command, Address, Data Input.
Meaning of tBLBH4 modified, partly replaced by tWHBH1 and tWHRL min for 3V devices
modified in Table 21., AC Characteristics for Operations.
References removed from RELATED DOCUMENTATION section and reference
made to ST Website instead.
Figure 6., Figure 7., Figure 31. and Figure 34. modified. Read Electronic Signature
paragraph clarified and Figure 30., Read Electronic Signature AC Waveform,
modified. Note 2 to Figure 32., Read C Operation, One Page AC Waveform, removed.
Note 3 to Table 7., Address Insertion, x16 Devices removed. Only 00h Pointer
operations are valid before a Cache Program operation. IDD4 removed from Table
18., DC Characteristics, 1.8V Devices. Note added to Figure 34., Block Erase AC
Waveform. Small text changes.
28-May-2004
6.0
TFBGA55 package added (mechanical data to be announced). 512Mb Dual Die
devices added. Figure 19., Cache Program Operation modified.
Package code changed for TFBGA63 8.5 x 15 x 1.2mm, 6x8 ball array, 0.8mm pitch
(1Gbit Dual Die devices) in Table 28., Ordering Information Scheme.
02-Jul-2004
7.0
Cache Program removed from document. TFBGA55 package specifications added
(Figure 42., TFBGA55 8 x 10mm - 6x8 active ball array - 0.80mm pitch, Package
Outline and Table 25., TFBGA55 8 x 10mm - 6x8 active ball array - 0.80mm pitch,
Package Mechanical Data).
Test
conditions
modified
for
VOL and VOH parameters in Table 19., DC
Characteristics, 3V Devices.
相关PDF资料
PDF描述
NAND01GR3A1AN1T 128M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND01GR3A3AN1T 128M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND01GR4A3AZB6F 64M X 16 FLASH 1.8V PROM, 15000 ns, PBGA63
NAND01GW4A3AN1T 64M X 16 FLASH 3V PROM, 12000 ns, PDSO48
NAND01GW4A1AZB1E 64M X 16 FLASH 3V PROM, 12000 ns, PBGA63
相关代理商/技术参数
参数描述
NAND512R4A2CWFD 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film
NAND512R4A2CZA6 制造商:Micron Technology Inc 功能描述:512MB. 3V X8 NO OPTION TSOP48TSOP-1 48 12X20 AL 42 - Trays
NAND512R4A2DDI6 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film
NAND512W3A0AN6 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
NAND512W3A0AN6E 功能描述:闪存 2.7-3.6V 512M(64Mx8) RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
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