参数资料
型号: NAND512R4A1AV6
厂商: NUMONYX
元件分类: PROM
英文描述: 32M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48
封装: 12 X 17 MM, PLASTIC, WSOP-48
文件页数: 54/56页
文件大小: 882K
代理商: NAND512R4A1AV6
7/56
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
SUMMARY DESCRIPTION
The NAND Flash 528 Byte/ 264 Word Page is a
family of non-volatile Flash memories that uses
NAND cell technology. The devices range from
128Mbits to 1Gbit and operate with either a 1.8V
or 3V voltage supply. The size of a Page is either
528 Bytes (512 + 16 spare) or 264 Words (256 + 8
spare) depending on whether the device has a x8
or x16 bus width.
The address lines are multiplexed with the Data In-
put/Output signals on a multiplexed x8 or x16 In-
put/Output bus. This interface reduces the pin
count and makes it possible to migrate to other
densities without changing the footprint.
Each block can be programmed and erased over
100,000 cycles. To extend the lifetime of NAND
Flash devices it is strongly recommended to imple-
ment an Error Correction Code (ECC). A Write
Protect pin is available to give a hardware protec-
tion against program and erase operations.
The devices feature an open-drain Ready/Busy
output that can be used to identify if the Program/
Erase/Read (P/E/R) Controller is currently active.
The use of an open-drain output allows the Ready/
Busy pins from several memories to be connected
to a single pull-up resistor.
A Copy Back command is available to optimize the
management of defective blocks. When a Page
Program operation fails, the data can be pro-
grammed in another page without having to re-
send the data to be programmed.
The devices are available in the following packag-
es:
TSOP48 12 x 20mm for all products
WSOP48 12 x 17 x 0.65mm for 128Mb,
256Mb and 512Mb products
VFBGA55 (8 x 10 x 1mm, 6 x 8 ball array,
0.8mm pitch) for 128Mb and 256Mb products
TFBGA55 (8 x 10 x 1.2mm, 6 x 8 ball array,
0.8mm pitch) for 512Mb Dual Die product
VFBGA63 (8.5 x 15 x 1mm, 6 x 8 ball array,
0.8mm pitch) for the 512Mb product
TFBGA63 (8.5 x 15 x 1.2mm, 6 x 8 ball array,
0.8mm pitch) for the 1Gb Dual Die product
Three options are available for the NAND Flash
family:
Automatic Page 0 Read after Power-up, which
allows the microcontroller to directly download
the boot code from page 0.
Chip Enable Don’t Care, which allows code to
be directly downloaded by a microcontroller,
as Chip Enable transitions during the latency
time do not stop the read operation.
A Serial Number, which allows each device to
be uniquely identified. The Serial Number
options is subject to an NDA (Non Disclosure
Agreement) and so not described in the
datasheet. For more details of this option
contact your nearest ST Sales office.
For information on how to order these options refer
vices are shipped from the factory with Block 0 al-
ways valid and the memory content bits, in valid
blocks, erased to ’1’.
See Table 2., Product Description, for all the de-
vices available in the family.
相关PDF资料
PDF描述
NAND01GR3A1AN1T 128M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND01GR3A3AN1T 128M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND01GR4A3AZB6F 64M X 16 FLASH 1.8V PROM, 15000 ns, PBGA63
NAND01GW4A3AN1T 64M X 16 FLASH 3V PROM, 12000 ns, PDSO48
NAND01GW4A1AZB1E 64M X 16 FLASH 3V PROM, 12000 ns, PBGA63
相关代理商/技术参数
参数描述
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