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参数资料
| 型号： | NAND512W3A0AN1 |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 64M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| 封装： | 12 X 20 MM, PLASTIC, TSOP-48 |
| 文件页数： | 9/57页 |
| 文件大小： | 916K |
| 代理商： | NAND512W3A0AN1 |
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A
BUS OPERATIONS
There are six standard bus operations that control
the memory. Each of these is described in this
section, see Table 5., Bus Operations, for a sum-
mary.
Command Input
Command Input bus operations are used to give
commands to the memory. Command are accept-
ed when Chip Enable is Low, Command Latch En-
able is High, Address Latch Enable is Low and
Read Enable is High. They are latched on the ris-
ing edge of the Write Enable signal.
Only I/O0 to I/O7 are used to input commands.
See Figure 23. and Table 20. for details of the tim-
ings requirements.
Address Input
Address Input bus operations are used to input the
memory address. Three bus cycles are required to
input the addresses for the 128Mb and 256Mb de-
vices and four bus cycles are required to input the
addresses for the 512Mb and 1Gb devices (refer
The addresses are accepted when Chip Enable is
Low, Address Latch Enable is High, Command
Latch Enable is Low and Read Enable is High.
They are latched on the rising edge of the Write
Enable signal. Only I/O0 to I/O7 are used to input
addresses.
See Figure 24. and Table 20. for details of the tim-
ings requirements.
Data Input
Data Input bus operations are used to input the
data to be programmed.
Data is accepted only when Chip Enable is Low,
Address Latch Enable is Low, Command Latch
Enable is Low and Read Enable is High. The data
is latched on the rising edge of the Write Enable
signal. The data is input sequentially using the
Write Enable signal.
tails of the timings requirements.
Data Output
Data Output bus operations are used to read: the
data in the memory array, the Status Register, the
Electronic Signature and the Serial Number.
Data is output when Chip Enable is Low, Write En-
able is High, Address Latch Enable is Low, and
Command Latch Enable is Low.
The data is output sequentially using the Read En-
able signal.
See Figure 26. and Table 21. for details of the tim-
ings requirements.
Write Protect
Write Protect bus operations are used to protect
the memory against program or erase operations.
When the Write Protect signal is Low the device
will not accept program or erase operations and so
the contents of the memory array cannot be al-
tered. The Write Protect signal is not latched by
Write Enable to ensure protection even during
power-up.
Standby
When Chip Enable is High the memory enters
Standby mode, the device is deselected, outputs
are disabled and power consumption is reduced.
Table 5. Bus Operations
Note: 1. Only for x16 devices.
2. WP must be VIH when issuing a program or erase command.
Bus Operation
E
AL
CL
R
W
WP
I/O0 - I/O7
I/O8 - I/O15(1)
Command Input
VIL
VIH
Rising
X(2)
Command
X
Address Input
VIL
VIH
VIL
VIH
Rising
X
Address
X
Data Input
VIL
VIH
Rising
X
Data Input
Data Output
VIL
Falling
VIH
X
Data Output
Write Protect
X
VIL
XX
Standby
VIH
XX
X
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| NAND512W3A2BN1E | 64M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND512W3A0AN6 | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND512W3A0AN6E | 功能描述:闪存 2.7-3.6V 512M(64Mx8) RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND512W3A0AN6F | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 512MBIT 64MX8 12US 48TSOP - Tape and Reel |
| NAND512W3A0AV6E | 功能描述:IC FLASH 512MBIT 48WSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M（64M x 8） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040 |
| NAND512W3A2BE06 | 制造商:STMicroelectronics 功能描述:512 MBIT NAND FLASH MEMORY WAFER |
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