参数资料
| 型号： | NBSG16VSMNR2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 9/14页 |
| 文件大小： | 0K |
| 描述： | IC RCVR/DRIVER SIGE DIFF 16QFN |
| 产品变化通告： | Revision of Device Specifications 02/Oct/2008 LTB Notification 06/Feb/2008 |
| 标准包装： | 3,000 |
| 类型： | 收发器 |
| 应用： | 仪表 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-VFQFN 裸露焊盘 |
| 供应商设备封装： | 16-QFN（3x3） |
| 包装： | 带卷 (TR) |
| 其它名称： | NBSG16VSMNR2OSTR |
NBSG16VS
http://onsemi.com
4
Table 3. ATTRIBUTES
Characteristics
Value
Internal Input Pulldown Resistor (D, D)
75 kW
Internal Input Pullup Resistor (D)
36.5 kW
ESD Protection
Human Body Model
Machine Model
> 2 kV
> 100 V
Moisture Sensitivity (Note 4)
Pb Pkg
PbFree Pkg
FCBGA16
QFN16
Level 3
Level 1
Level 3
Level 1
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V0 @ 0.125 in
Transistor Count
192
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
4. For additional information, see Application Note AND8003/D.
Table 4. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
Rating
Unit
VCC
Positive Power Supply
VEE = 0 V
3.6
V
VEE
Negative Power Supply
VCC = 0 V
3.6
V
VI
Positive Input
Negative Input
VEE = 0 V
VCC = 0 V
VI v VCC
VI w VEE
3.6
V
VINPP
Differential Input Voltage
|D D| VCC VEE w 2.8 V
VCC VEE t 2.8 V
2.8
|VCC VEE|
V
IOUT
Output Current
Continuous
Surge
25
50
mA
IIN
Input Current Through RT (50 W Resistor)
Static
Surge
45
80
mA
IBB
VBB Sink/Source
1
mA
IMM
VMM Sink/Source
1
mA
TA
Operating Temperature Range
40 to +85
°C
Tstg
Storage Temperature Range
65 to +150
°C
qJA
Thermal Resistance (JunctiontoAmbient)
(Note 5)
0 lfpm
500 lfpm
0 lfpm
500 lfpm
FCBGA16
QFN16
108
86
41.6
35.2
°C/W
qJC
Thermal Resistance (JunctiontoCase)
2S2P (Note 5)
2S2P (Note 6)
FCBGA16
QFN16
5.0
4.0
°C/W
Tsol
Wave Solder
Pb
PbFree
225
265
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
5. JEDEC standard 516 multilayer board 2S2P (2 signal, 2 power).
6. JEDEC standards multilayer board 2S2P (2 signal, 2 power) with 8 filled thermal vias under exposed pad.
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相关代理商/技术参数 |
参数描述 |
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| NBSG16VSMNR2G | 功能描述:缓冲器和线路驱动器 2.5V/3.3V SiGe Diff w/Variable Output RoHS:否 制造商:Micrel 输入线路数量:1 输出线路数量:2 极性:Non-Inverting 电源电压-最大:+/- 5.5 V 电源电压-最小:+/- 2.37 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Reel |
| NBSG53A | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:2.5V/3.3V SiGe Selectable Differential Clock and Data D Flip-Flop/Clock Divider with Reset and OLS |
| NBSG53A/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2.5V/3.3V SiGe Selectable Differential Clock and Data D Flip-Flop/Clock Divider with Reset and OLS |
| NBSG53A_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:2.5V/3.3V SiGe Selectable Differential Clock and Data D Flip−Flop/Clock Divider with Reset and OLS |
| NBSG53ABA | 功能描述:触发器 2.5V/3.3V SiGe Diff RoHS:否 制造商:Texas Instruments 电路数量:2 逻辑系列:SN74 逻辑类型:D-Type Flip-Flop 极性:Inverting, Non-Inverting 输入类型:CMOS 输出类型: 传播延迟时间:4.4 ns 高电平输出电流:- 16 mA 低电平输出电流:16 mA 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:X2SON-8 封装:Reel |
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