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参数资料
| 型号： | NCL30100ADLMGEVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 14/27页 |
| 文件大小： | 0K |
| 描述： | BOARD DEMO MR16 FORMFACTOR |
| 设计资源： | NCL30100ADLMGEVB Schematic NCL30100ADLMGEVB Gerber Files NCL30100ADLMGEVB Bill of Materials |
| 标准包装： | 1 |
| 输出及类型： | 1，非隔离 |
| 输入电压： | 12V |
| 已供物品： | 板 |
| 已用 IC / 零件： | NCL30100 |
| 其它名称： | NCL30100ADLMGEVBOS |
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NCL30100
1000
900
800
700
600
500
400
600
500
400
300
200
Rivc = 300k
Rivc = 510k
Rivc = 1 Meg
Rivc = 1.5 Meg
Rivc = 2.2 Meg
Rivc = 3.7 Meg
300
200
100
Rivc = 300k
Rivc = 510k
Rivc = 1 Meg
Rivc = 1.5 Meg
Rivc = 2.2 Meg
Rivc = 3.7 Meg
100
7
8
Rivc = infinity
9 10
11 12 13 14 15
16
17
18
0
7
8
9
Rivc = infinity
10 11 12 13 14 15
16
17
18
? 0.097 @ X 2 ) 24.5 @ X ) 1358.1
V CT +
^ 1.58 V
I CS + ? 0.75 @ IVC ) 50 @ 10 ? 6 [ m A]
INPUT VOLTAGE (V)
Figure 26. R ivc Impact versus V in for I LED =
700 mA Nominal
A value 1.5 M W was used since the input voltage has a
sinusoidal component due to the low voltage AC input and
desires to have a small bulk capacitance, thus compensating
for part of this variation.
The dependence of V CT on IVC current is described by the
following equation:
V CT + [V] (eq. 13)
976.8
Using the result from Equation 12 and put it to Equation 13
the V CT threshold will be calculated:
? 0.097 @ 7.91 2 ) 24.5 @ 7.91 ) 1358.1
976.8
(eq. 14)
The CT capacitance can be calculated using the equations
above:
INPUT VOLTAGE (V)
Figure 27. Rivc Impact versus V in for I LED =
350 mA Nominal
calculated value is not standard, so the nearest value 33 pF
has been selected.
Now we can calculate the I PK of LED. The average value
is set to 700 mA and the target ripple is set at 120 mA, the
I PK equals 760 mA. R shift has been chosen to be as small a
voltage drop as possible to minimize power dissipation so an
R shift of 100 m W has been selected.
Before calculation of R shift we need to know the I CS
current, which affects the offset on R shift . The I CS value
dependents on the IVC current and for IVC currents between
0 ? 50 m A, it can be described by this formula:
(eq. 16)
Therefore:
I CS + ? 0.75 @ IVC ) 50 @ 10 ? 6 (eq. 17)
+ ? 0.75 @ 7.91 @ 10 ? 6 ) 50 @ 10 ? 6 ^ 44.07 m A
I CT @ t OFF * CT delay
I +
? C CT +
+
dv @ C
dt V CT
50 @ 10 ? 6 @ 1.654 @ 10 ? 6 * 220 @ 10 ? 9
1.58
(eq. 15)
^ 45.8 pF
To calculate R shift it is necessary to know the I pk current
through the inductor. From the time that the current sense
comparator detects that the peak current threshold has been
crossed to the time that the external MOSFET switch is
turned off there is a propagation delay. Depending on the
value of the inductor selected (which is based on the target
The intrinsic pin capacitance CT pin (~8 pF) in
conjunction with the dimming transistor (~10 pF) in this
schematic approximately 18 pF so this value must be
switching frequency), there is a current error between the
intended peak current and the actual peak current, this is
illustrated in Figure 28.
subtracted from the calculated value in Equation 15. The
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