参数资料
型号: NCP1030DMR2G
厂商: ON Semiconductor
文件页数: 9/19页
文件大小: 0K
描述: IC CTRLR PWM OTP OVD HV MICRO8
标准包装: 1
输出隔离: 任意一种
频率范围: 260kHz ~ 325kHz
输入电压: 7.6 V ~ 16 V
输出电压: 200V
功率(瓦特): 582mW
工作温度: -40°C ~ 150°C
封装/外壳: 8-TSSOP,8-MSOP(0.118",3.00mm 宽)
供应商设备封装: Micro8?
包装: 剪切带 (CT)
其它名称: NCP1030DMR2GOSCT
NCP1030, NCP1031
TYPICAL CHARACTERISTICS
2.600
2.575
2.550
2.525
2.500
2.475
2.450
2.425
2.400
2.375
2.350
220
210
200
190
180
170
160
150
140
130
120
--50
--25
0
25
50
75
100
125 150
--50
--25
0 25 50 75 100 125
150
1000
T J , JUNCTION TEMPERATURE ( ? C)
Figure 16. Line Under/Overvoltage Thresholds
vs. Junction Temperature
1100
T J , JUNCTION TEMPERATURE ( ? C)
Figure 17. Line Under/Overvoltage Hysteresis
vs. Junction Temperature
900
800
V CC = 12 V
T J = 25 ? C
1000
900
C T = 47 pF
V CC = 12 V
700
600
800
700
500
400
300
200
100
600
500
400
300
200
C T = 220 pF
C T = 1000 pF
0
0
200
400
600
800
1000
100
--50
--25
0
25
50
75
100
125
150
C T , TIMING CAPACITOR (pF)
Figure 18. Oscillator Frequency vs. Timing
Capacitor
T J , JUNCTION TEMPERATURE ( ? C)
Figure 19. Oscillator Frequency vs. Junction
Temperature
77.0
76.5
76.0
75.5
75.0
V CC = 12 V
f OSC = 200 kHz
8
7
6
5
V CC = 12 V
I D = 100 mA
NCP1030
74.5
74.0
f OSC = 1000 kHz
4
3
73.5
73.0
72.5
2
1
NCP1031
72.0
--50
--25
0 25 50 75
100 125
150
0
--50
--25
0 25 50 75
100 125
150
T J , JUNCTION TEMPERATURE ( ? C)
Figure 20. Maximum Duty Cycle vs. Junction
Temperature
T J , JUNCTION TEMPERATURE ( ? C)
Figure 21. Power Switch Circuit On Resistance
vs. Junction Temperature
http://onsemi.com
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