参数资料
型号: NCP1200P60G
厂商: ON Semiconductor
文件页数: 7/16页
文件大小: 0K
描述: IC CTLR PWM CM 8DIP
标准包装: 50
输出隔离: 隔离
频率范围: 52kHz ~ 70kHz
输入电压: 11 V ~ 16 V
工作温度: -25°C ~ 125°C
封装/外壳: 8-DIP(0.300",7.62mm)
供应商设备封装: 8-PDIP
包装: 管件
其它名称: NCP1200P60GOS
NCP1200
APPLICATIONS INFORMATION
INTRODUCTION
The NCP1200 implements a standard current mode
architecture where the switch ? off time is dictated by the
peak current setpoint. This component represents the ideal
candidate where low part ? count is the key parameter,
particularly in low ? cost AC ? DC adapters, auxiliary
supplies etc. Due to its high ? performance High ? Voltage
technology, the NCP1200 incorporates all the necessary
components normally needed in UC384X based supplies:
timing components, feedback devices, low ? pass filter and
self ? supply. This later point emphasizes the fact that ON
Semiconductor’s NCP1200 does NOT need an auxiliary
winding to operate: the product is naturally supplied from
the high ? voltage rail and delivers a V CC to the IC. This
system is called the Dynamic Self ? Supply (DSS).
V CCOFF = 11.4 V
10.6 V Avg.
Dynamic Self ? Supply
The DSS principle is based on the charge/discharge of the
V CC bulk capacitor from a low level up to a higher level. We
can easily describe the current source operation with a bunch
of simple logical equations:
POWER ? ON: IF V CC < V CCOFF THEN Current Source
is ON, no output pulses
IF V CC decreasing > V CCON THEN Current Source is
OFF, output is pulsing
IF V CC increasing < V CCOFF THEN Current Source is
ON, output is pulsing
Typical values are: V CCOFF = 11.4 V, V CCON = 9.8 V
To better understand the operational principle, Figure 15’s
sketch offers the necessary light:
V CC
V CCON = 9.8 V
ON
OFF
Current
Source
Output Pulses
10.00M
30.00M
50.00M
70.00M
90.00M
Figure 15. The Charge/Discharge Cycle
Over a 10 m F V CC Capacitor
Fsw @ Qg @ V cc
2 * Vmains PEAK
becomes . Our power contribution
The DSS behavior actually depends on the internal IC
consumption and the MOSFET’s gate charge, Qg. If we
select a MOSFET like the MTD1N60E, Qg equals 11 nC
(max). With a maximum switching frequency of 48 kHz (for
the P40 version), the average power necessary to drive the
MOSFET (excluding the driver efficiency and neglecting
various voltage drops) is:
with
Fsw = maximum switching frequency
Qg = MOSFET’s gate charge
V CC = V GS level applied to the gate
. 0.16 = 256 mW. If for design reasons this contribution is
still too high, several solutions exist to diminish it:
1. Use a MOSFET with lower gate charge Qg
2. Connect pin through a diode (1N4007 typically) to
one of the mains input. The average value on pin 8
p
example drops to: 160 mW.
Dstart
1N4007
1 HV 8
To obtain the final driver contribution to the IC
consumption, simply divide this result by V CC : Idriver =
Fsw @ Qg = 530 m A. The total standby power consumption
at no ? load will therefore heavily rely on the internal IC
consumption plus the above driving current (altered by the
driver ’s efficiency). Suppose that the IC is supplied from a
400 V DC line. To fully supply the integrated circuit, let’s
EMI
Filter
C3
4.7 m F
400 V
+
NCP1200
Adj
2 FB NC 7
3 CS V CC 6
4 GND Drv 5
imagine the 4 mA source is ON during 8 ms and OFF during
50 ms. The IC power contribution is therefore: 400 V . 4 mA
Figure 16. A simple diode naturally reduces the
average voltage on pin 8
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