- 您现在的位置：买卖IC网 > PDF目录19852 > NCP1200P60G (ON Semiconductor)IC CTLR PWM CM 8DIP PDF资料下载
参数资料
| 型号： | NCP1200P60G |
| 厂商： | ON Semiconductor |
| 文件页数： | 9/16页 |
| 文件大小： | 0K |
| 描述： | IC CTLR PWM CM 8DIP |
| 标准包装： | 50 |
| 输出隔离： | 隔离 |
| 频率范围： | 52kHz ~ 70kHz |
| 输入电压： | 11 V ~ 16 V |
| 工作温度： | -25°C ~ 125°C |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
| 其它名称： | NCP1200P60GOS |
NCP1200
T Jmax * T Amax
R R q J * A
Power Dissipation
The NCP1200 is directly supplied from the DC rail
through the internal DSS circuitry. The current flowing
through the DSS is therefore the direct image of the
NCP1200 current consumption. The total power dissipation
can be evaluated using: (V HVDC * 11 V) @ ICC2. If we
operate the device on a 250 VAC rail, the maximum rectified
voltage can go up to 350 VDC. As a result, the worse case
dissipation occurs on the 100 kHz version which will
dissipate 340 . 1.8 mA@Tj = ? 25 ° C = 612 mW (however
this 1.8 mA number will drop at higher operating
temperatures). Please note that in the above example, I CC2
is based on a 1 nF capacitor loading pin 5. As seen before,
I CC2 will depend on your MOSFET’s Q g : I CC2 = I CC1 + F sw
x Q g . Final calculations shall thus account for the total
gate ? charge Q g your MOSFET will exhibit. A DIP8
package offers a junction ? to ? ambient thermal resistance
of R q J ? A 100 ° C/W. The maximum power dissipation can
thus be computed knowing the maximum operating
ambient temperature (e.g. 70 ° C) together with the
maximum allowable junction temperature (125 ° C):
Pmax + = 550 mW. As we can see, we do not
reach the worse consumption budget imposed by the 100
kHz version. Two solutions exist to cure this trouble. The
first one consists in adding some copper area around the
NCP1200 DIP8 footprint. By adding a min ? pad area of 80
mm 2 of 35 m copper (1 oz.) R q J ? A drops to about 75 ° C/W
which allows the use of the 100 kHz version. The other
solutions are:
1. Add a series diode with pin 8 (as suggested in the
above lines) to drop the maximum input voltage
down to 222 V ((2 350)/pi) and thus dissipate
less than 400 mW
2. Implement a self ? supply through an auxiliary
winding to permanently disconnect the self ? supply.
SOIC ? 8 package offers a worse R q J ? A compared to that of
the DIP8 package: 178 ° C/W. Again, adding some copper
area around the PCB footprint will help decrease this
Overload Operation
In applications where the output current is purposely not
controlled (e.g. wall adapters delivering raw DC level), it is
interesting to implement a true short ? circuit protection. A
short ? circuit actually forces the output voltage to be at a low
level, preventing a bias current to circulate in the
optocoupler LED. As a result, the FB pin level is pulled up
to 4.1 V, as internally imposed by the IC. The peak current
setpoint goes to the maximum and the supply delivers a
rather high power with all the associated effects. Please note
that this can also happen in case of feedback loss, e.g. a
broken optocoupler. To account for this situation, the
NCP1200 hosts a dedicated overload detection circuitry.
Once activated, this circuitry imposes to deliver pulses in a
burst manner with a low duty cycle. The system recovers
when the fault condition disappears.
During the startup phase, the peak current is pushed to the
maximum until the output voltage reaches its target and the
feedback loop takes over. This period of time depends on
normal output load conditions and the maximum peak
current allowed by the system. The time ? out used by this IC
works with the V CC decoupling capacitor: as soon as the
V CC decreases from the V CCOFF level (typically 11.4 V) the
device internally watches for an overload current situation.
If this condition is still present when V CCON is reached, the
controller stops the driving pulses, prevents the self ? supply
current source to restart and puts all the circuitry in standby,
consuming as little as 350 m A typical (I CC3 parameter). As
a result, the V CC level slowly discharges toward 0. When
this level crosses 6.3 V typical, the controller enters a new
startup phase by turning the current source on: V CC rises
toward 11.4 V and again delivers output pulses at the
UVLO H crossing point. If the fault condition has been
removed before UVLO L approaches, then the IC continues
its normal operation. Otherwise, a new fault cycle takes
place. Figure 20 shows the evolution of the signals in
presence of a fault.
number: 12 mm x 12 mm to drop R q J ? A down to 100 ° C/W
with 35 m copper thickness (1 oz.) or 6.5 mm x 6.5 mm with
70 m copper thickness (2 oz.). One can see, we do not
recommend using the SOIC package for the 100 kHz version
with DSS active as the IC may not be able to sustain the
power (except if you have the adequate place on your PCB).
However, using the solution of the series diode or the
self ? supply through the auxiliary winding does not cause
any problem with this frequency version. These options are
thoroughly described in the AND8023/D.
http://onsemi.com
9
相关PDF资料 |
PDF描述 |
|---|---|
| GEC30DRTS | CONN EDGECARD 60POS DIP .100 SLD |
| LTC1645CS8#TRPBF | IC CTRLR SEQ HOTSWAP DUAL 8SOIC |
| RMC40DRTS-S13 | CONN EDGECARD 80POS .100 EXTEND |
| EMC40DRTN-S13 | CONN EDGECARD 80POS .100 EXTEND |
| EPM7064SLC44-10N | IC MAX 7000 CPLD 64 44-PLCC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NCP1200P60G | 制造商:ON Semiconductor 功能描述:Pulse Width Modulation (PWM) Controller |
| NCP1201 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power Factor Controllers |
| NCP1201/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PWM Current-Mode Controller for Universal Off-Line Supplies Featuring Low Standby Power with Fault Protection Modes |
| NCP1201_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:PWM Current−Mode Controller for Universal Off−Line Supplies Featuring Low Standby Power with Fault Protection Modes |
| NCP1201D100R2 | 功能描述:电流型 PWM 控制器 Current Mode PWM RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
发布紧急采购，3分钟左右您将得到回复。