参数资料
型号: NCP1378DR2
厂商: ON Semiconductor
文件页数: 3/15页
文件大小: 0K
描述: IC REG CTRLR FLYBACK PWM 8-SOIC
产品变化通告: LTB Notification 03/Jan/2008
标准包装: 2,500
PWM 型: 电流模式
输出数: 1
频率 - 最大: 100kHz
电源电压: 8.2 V ~ 18 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: 0°C ~ 125°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
包装: 带卷 (TR)
其它名称: NCP1378DR2OS
NCP1378
4.5 m s
Delay
HV
Demag
+
Resd
Demag
4 mA
V CC
+
+
PON
5.2 V
+
OVP
+
8 m s
Blanking
S
Q
S * Q
R* R
+
50 mV
V CC
10 V
Drv
8.4 V
7.5 V
5.6 V (Fault)
Driver src = 20 sink = 10
4.2 V
To Internal
Supply
Fault
Mngt.
+
-
Soft--Start = 1 ms
1V
/3
FB
GND
Overload?
5 m s
Timeout
Timeout
Reset
200 m A
when DRV
is OFF
340 ns
LEB
Demag
CS
*S and R are level triggered whereas S is edge
triggered. R has priority over the other inputs.
Figure 2. Internal Circuit Architecture
MAXIMUM RATINGS
Rating
Power Supply Voltage, V CC Pin, Continuous Voltage
Transient Power Supply Voltage, Duration < 10 ms, IV CC < 20 mA
Power Supply Voltage
Maximum Voltage on all other pins except Pin 8 (HV), Pin 6 (V CC ) and Pin 5 (Drv)
Maximum Current into all pins except V CC (6), HV (8) and Demag (1) when 10 V ESD di-
odes are activated
Maximum Current in Pin 1
Thermal Resistance, Junction--to--Case
Thermal Resistance, Junction--to--Air, SOIC Version
Thermal Resistance, Junction--to--Air, PDIP Version
Maximum Junction Temperature
Temperature Shutdown
Hysteresis in Shutdown
Storage Temperature Range
ESD Capability, HBM Model (All pins except V CC and HV)
ESD Capability, Machine Model
Maximum Voltage on Pin 8 (HV), Pin 6 (V CC ) Decoupled to Ground with 10 m F
Symbol
V CC Static
V CC Pulse
V CC , Drv
--
--
Idem
R θ JC
R θ JA
R θ JA
TJ MAX
--
--
--
--
--
V HV
Value
18
25
16
--0.3 to 10
5.0
+3.0/--2.0
57
178
100
150
155
30
--60 to +150
2.0
200
500
Unit
V
V
V
V
mA
mA
? C/W
? C/W
? C/W
? C
? C
? C
? C
kV
V
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
http://onsemi.com
3
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