参数资料
型号: NCP1606BPG
厂商: ON Semiconductor
文件页数: 5/22页
文件大小: 245K
描述: IC CTRLR PWR FACTOR 0.5V 8-DIP
产品变化通告: Product Obsolescence 05/Oct/2010
标准包装: 50
模式: 临界传导(CRM)
电流 - 启动: 20µA
电源电压: 10.3 V ~ 20 V
工作温度: -40°C ~ 125°C
安装类型: 通孔
封装/外壳: 8-DIP(0.300",7.62mm)
供应商设备封装: 8-PDIP
包装: 管件
NCP1606
http://onsemi.com
5
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified: For typical values, T
J
 = 25癈. For min/max values, T
J
 = 40癈 to +125癈, V
CC
 = 12 V, FB = 2.4 V, C
DRV
 =
1 nF, Ct = 1 nF, CS = 0 V, Control = open, ZCD = open)
Symbol
Unit
Max
Typ
Min
Rating
V
CL(NEG)
Negative Active Clamp Voltage @ I
ZCD
 = 2.5 mA
0.45
0.6
0.75
V
I
CL(NEG)
Current Capability of the Negative Active Clamp:
in normal mode (V
ZCD
 = 300 mV)
in shutdown mode (V
ZCD
 = 100 mV)
2.5
35
3.7
70
5.0
100
mA
mA
V
SD
L
Shutdown Threshold (V
ZCD
 falling)
150
200
250
mV
V
SD
H
Enable Threshold (V
ZCD
 rising)

290
350
mV
V
SD
HYS
Shutdown Comparator Hysteresis

90

mV
t
ZCD
Zero current detection propagation delay

100
170
ns
t
SYNC
Minimum detectable ZCD pulse width

70

ns
t
START
Drive off restart timer
75
180
300
ms
RAMP CONTROL
I
CHARGE
Charge Current (V
CT
 = 0 V)
25癈 < T
J
 < +125癈
40癈 < T
J
 < +125癈
243
235
270
270
297
297
mA
t
CT(discharge)
Time to discharge a 1 nF Ct capacitor from V
CT
 = 3.4 V to 100 mV.


100
ns
V
CTMAX
Maximum Ct level before DRV switches off
25癈 < T
J
 < +125癈
40癈 < T
J
 < +125癈
2.9
2.9
3.2
3.2
3.3
3.4
V
t
PWM
Propagation delay of the PWM comparator

150
220
ns
OVER AND UNDERVOLTAGE PROTECTION
I
OVP
Dynamic overvoltage protection (OVP) triggering current:
NCP1606A
NCP1606B @ T
J
 = 25癈
NCP1606B @ T
J
 = 40癈 to +125癈
34
9.0
8.7
40
10.4

45
11.8
12.1
mA
I
OVP(HYS)
Hysteresis of the dynamic OVP current before the OVP latch is released:
NCP1606A
NCP1606B


30
8.5


mA
V
OVP
Static OVP Threshold Voltage
V
EAL
 +
100 mV
V
V
UVP
Undervoltage protection (UVP) threshold voltage
0.25
0.3
0.4
V
GATE DRIVE SECTION
R
OH
R
OL
Gate Drive Resistance:
R
OH
 @ I
SOURCE
 = 100 mA
R
OH
 @ I
SOURCE
 = 20 mA
R
OL
 @ I
SINK
 = 100 mA
R
OL
 @ I
SINK
 = 20 mA




12
12
6
6
18
18
10
10
W
t
rise
Drive voltage rise time from 10% V
CC
 to 90% V
CC
 with C
DRV
 = 1 nF and V
CC
 = 12 V.

30
80
ns
t
fall
Drive voltage fall time from 90% V
CC
 to 10% V
CC
 with C
DRV
 = 1 nF and V
CC
 = 12 V.

25
70
ns
V
OUT(start)
Driver output voltage at V
CC
 = V
CC(on)
  200 mV and I
sink
 = 10 mA


0.2
V
3.  Parameter values are valid for transient conditions only.
4.  Parameter characterized and guaranteed by design, but not tested in production.
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