参数资料
型号: NCP1611BDR2G
厂商: ON Semiconductor
文件页数: 4/29页
文件大小: 879K
描述: IC PFC CTLR HE ENHANCED 8-SOIC
标准包装: 3,000
系列: *
NCP1611
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS (Conditions: V
CC
 = 15 V, T
J
 from 40癈 to +125癈, unless otherwise specified)
Symbol
Rating
Min
Typ
Max
Unit
STARTUP AND SUPPLY CIRCUIT
V
CC(on)
StartUp Threshold, V
CC
 increasing:
A version
B version
9.75
15.80
10.50
17.00
11.25
18.20
V
V
CC(off)
Minimum Operating Voltage, V
CC
 falling
8.50
9.00
9.50
V
V
CC(HYST)
Hysteresis (V
CC(on)
  V
CC(off)
)
A version
B version
0.75
6.00
1.50
8.00


V
I
CC(start)
 StartUp Current, V
CC
= 9.4 V

20
50
mA
I
CC(op)1
Operating Consumption, no switching (V
sense
 pin being grounded)

0.5
1.0
mA
I
CC(op)2
Operating Consumption, 50 kHz switching, no load on DRV pin

2.0
3.0
mA
CURRENT CONTROLLED FREQUENCY FOLDBACK
T
DT1
DeadTime, V
FFcontrol
 = 2.60 V (Note 6)


0
ms
T
DT2
DeadTime, V
FFcontrol
 = 1.75 V
14
18
22
ms
T
DT3
DeadTime, V
FFcontrol
 = 1.00 V
32
38
44
ms
I
DT1
FFcontrol pin current, V
sense
 = 1.4 V and V
control
 maximum
180
200
220
mA
I
DT2
FFcontrol pin current, V
sense
 = 2.8 V and V
control
 maximum
110
135
160
mA
V
SKIPH
FFcontrol pin Skip Level, V
FFcontrol
 rising

0.75
0.85
V
V
SKIPL
FFcontrol pin Skip Level, V
FFcontrol
 falling
0.55
0.65

V
V
SKIPHYST
FFcontrol pin Skip Hysteresis
50


mV
GATE DRIVE
T
R
Output voltage risetime @ C
L
 = 1 nF, 1090% of output signal

30

ns
T
F
Output voltage falltime @ C
L
 = 1 nF, 1090% of output signal

20

ns
R
OH
Source resistance

10

W
R
OL
Sink resistance

7.0

W
I
SOURCE
Peak source current, V
DRV
 = 0 V (guaranteed by design)

500

mA
I
SINK
Peak sink current, V
DRV
 = 12 V (guaranteed by design)

800

mA
V
DRVlow
DRV pin level at V
CC
 close to V
CC(off)
 with a 10 kW resistor to GND
8.0


V
V
DRVhigh
DRV pin level at V
CC
 = 35 V (R
L
 = 33 kW, C
L
 = 1 nF)
10
12
14
V
REGULATION BLOCK
V
REF
Feedback Voltage Reference:
from 0癈 to 125癈
Over the temperature range
2.44
2.42
2.50
2.50
2.54
2.54
V
I
EA
Error Amplifier Current Capability

?0

mA
G
EA
Error Amplifier Gain
110
220
290
mS
V
CONTROL
V
CONTROL
MAX
V
CONTROL
MIN
V
control
 Pin Voltage
 @ V
FB
 = 2 V
 @ V
FB
 = 3 V


4.5
0.5


V
V
OUT
L / V
REF
Ratio (V
OUT
 Low Detect Threshold / V
REF
) (guaranteed by design)
95.0
95.5
96.0
%
H
OUT
L / V
REF
Ratio (V
OUT
 Low Detect Hysteresis / V
REF
) (guaranteed by design)


0.5
%
I
BOOST
V
control
 Pin Source Current when (V
OUT
 Low Detect) is activated
180
220
250
mA
CURRENT SENSE AND ZERO CURRENT DETECTION BLOCKS
V
CS(th)
Current Sense Voltage Reference
450
500
550
mV
6.  There is actually a minimum deadtime that is the delay between the core reset detection and the DRV turning on (T
ZD
 parameter of the
Current Sense and Zero Current Detection Blocks section).
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