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参数资料
| 型号： | NCP1611BDR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/29页 |
| 文件大小： | 879K |
| 描述： | IC PFC CTLR HE ENHANCED 8-SOIC |
| 标准包装： | 3,000 |
| 系列： | * |
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NCP1611
http://onsemi.com
6
TYPICAL ELECTRICAL CHARACTERISTICS (Conditions: V
CC
= 15 V, T
J
from 40癈 to +125癈, unless otherwise specified)
Symbol
Unit
Max
Typ
Min
Rating
BROWNOUT PROTECTION AND FEEDFORWARD
V
HL
Comparator Threshold for Line Range Detection, V
sense
rising
2.1
2.2
2.3
V
V
LL
Comparator Threshold for Line Range Detection, V
sense
falling
1.6
1.7
1.8
V
V
HL(hyst)
Comparator Hysteresis for Line Range Detection
400
500
600
mV
T
HL(blank)
Blanking Time for Line Range Detection
15
25
35
ms
I
BO(bias)
BrownOut Pin Bias Current, V
sense
= V
BOH
250
250
nA
THERMAL SHUTDOWN
T
LIMIT
Thermal Shutdown Threshold
150
癈
H
TEMP
Thermal Shutdown Hysteresis
50
癈
6. There is actually a minimum deadtime that is the delay between the core reset detection and the DRV turning on (T
ZD
parameter of the
Current Sense and Zero Current Detection Blocks section).
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| NCP1611GEVB | 制造商:ON Semiconductor 功能描述:PG - ACDC CONVERSION - Bulk 制造商:ON Semiconductor 功能描述:EVAL BOARD, NCP1611, POWER FACTOR CORRECTION; Silicon Manufacturer:On Semiconductor; Silicon Core Number:NCP1611; Kit Application Type:Power Management; Application Sub Type:Power Factor Correction (PFC) ;RoHS Compliant: Yes |
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