参数资料
| 型号： | NCP3020BDR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 14/23页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM VM 8-SOIC |
| 标准包装： | 1 |
| PWM 型： | 电压模式 |
| 输出数： | 1 |
| 频率 - 最大： | 670kHz |
| 占空比： | 80% |
| 电源电压： | 4.7 V ~ 28 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 标准包装 |
| 其它名称： | NCP3020BDR2GOSDKR |
NCP3020A, NCP3020B, NCV3020A, NCV3020B
Reduced sampling time occurs at high duty cycles where
the low side MOSFET is off for the majority of the switching
period. Reduced sampling time causes errors in the
regulated voltage on the boost pin. High duty cycle / input
voltage induced sampling errors can result in increased
boost ripple voltage or higher than desired DC boost voltage.
Figure 29 outlines all operating regions.
The recommended operating conditions are shown in
Region 1 (Green) where a 0.1 m F, 25 V ceramic capacitor
can be placed on the boost pin without causing damage to the
device or MOSFETS. Larger boost ripple voltage occurring
over several switching cycles is shown in Region 2 (Yellow).
Boost Voltage Levels
The boost ripple frequency is dependent on the output
capacitance selected. The ripple voltage will not damage the
device or $ 12 V gate rated MOSFETs.
Conditions where maximum boost ripple voltage could
damage the device or $ 12 V gate rated MOSFETs can be
seen in Region 3 (Orange). Placing a boost capacitor that is
no greater than 10X the input capacitance of the high side
MOSFET on the boost pin limits the maximum boost
voltage < 12 V. The typical drive waveforms for Regions 1,
2 and 3 (green, yellow, and orange) regions of Figure 29 are
shown in Figure 30.
Normal Operation
Increased Boost Ripple
(Still in Specification)
Increased Boost Ripple
Capacitor Optimization
Required
28
26
24
22
20
22V
Region 3
18
16
14
Region 1
Region 2
Max
Maxi
mum
Duty
Cycle
12
10
8
6
4
11.5V
71%
2
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
Duty Cycle
Figure 29. Safe Operating Area for Boost Voltage with a 0.1 m F Capacitor
http://onsemi.com
14
相关PDF资料 |
PDF描述 |
|---|---|
| NCP304ALSQ43T1G | IC VOLT DETECTOR 4.3V SC-82AB |
| NCP305LSQ49T1 | IC VOLT DETECT OD 4.9V SC-82AB |
| NCP3101CMNTXG | IC REG BUCK SYNC ADJ 6A 40QFN |
| NCP3120MNTXG | IC REG BUCK ADJ 2A DL 32QFN |
| NCP3121MNTXG | IC REG BUCK ADJ 3A DL 32QFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NCP3020BGEVB | 功能描述:电源管理IC开发工具 NCP3020A EVALUATION BOARD RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| NCP302HSN09T1 | 功能描述:电压监测器/监控器 0.9V Detector RoHS:否 制造商:Texas Instruments 监测电压数:2 监测电压:Adjustable 输出类型:Open Drain 欠电压阈值: 过电压阈值: 准确性:1 % 工作电源电压:1.5 V to 6.5 V 工作电源电流:1.8 uA 最大工作温度:+ 125 C 封装 / 箱体:SON-6 安装风格:SMD/SMT |
| NCP302HSN09T1G | 功能描述:电压监测器/监控器 0.9V Detector w/Reset Hgh RoHS:否 制造商:Texas Instruments 监测电压数:2 监测电压:Adjustable 输出类型:Open Drain 欠电压阈值: 过电压阈值: 准确性:1 % 工作电源电压:1.5 V to 6.5 V 工作电源电流:1.8 uA 最大工作温度:+ 125 C 封装 / 箱体:SON-6 安装风格:SMD/SMT |
| NCP302HSN15T1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NCP302HSN18T1 | 功能描述:电压监测器/监控器 1.8V Detector RoHS:否 制造商:Texas Instruments 监测电压数:2 监测电压:Adjustable 输出类型:Open Drain 欠电压阈值: 过电压阈值: 准确性:1 % 工作电源电压:1.5 V to 6.5 V 工作电源电流:1.8 uA 最大工作温度:+ 125 C 封装 / 箱体:SON-6 安装风格:SMD/SMT |
发布紧急采购，3分钟左右您将得到回复。