参数资料
型号: NCP3418BMNR2G
厂商: ON Semiconductor
文件页数: 2/8页
文件大小: 0K
描述: IC MOSFET DRIVER DUAL 12V 10-DFN
产品变化通告: Product Discontinuation 01/Oct/2008
标准包装: 3,000
配置: 高端和低端,同步
输入类型: PWM
延迟时间: 30ns
电流 - 峰: 1.5A
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 30V
电源电压: 4.6 V ~ 13.2 V
工作温度: 0°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 10-VFDFN 裸露焊盘
供应商设备封装: 10-DFN(3x3)
包装: 带卷 (TR)
NCP3418B
OD
3
V CC
TSD
1
BST
UVLO
IN
2
8
DRVH
FALLING
EDGE
MONITOR
DELAY
FALLING
EDGE
DELAY
MONITOR
7
SWN
START STOP
MIN DRVL
NON?OVERLAP
TIMERS
4
V CC
OFF TIMER
PIN DESCRIPTION
Figure 1. Block Diagram
5
6
DRVL
PGND
SO?8
1
DFN?10
1
Symbol
BST
Description
Upper MOSFET Floating Bootstrap Supply. A capacitor connected between BST and SW pins holds
this bootstrap voltage for the high?side MOSFET as it is switched. The recommended capacitor value
is between 100 nF and 1.0 m F. An external diode is required with the NCP3418B.
2
3
4
?
5
6
?
7
8
2
3
4
5
6
7
8
9
10
IN
OD
V CC
V CC
DRVL
PGND
PGND
SWN
DRVH
Logic?Level Input. This pin has primary control of the drive outputs.
Output Disable. When low, normal operation is disabled forcing DRVH and DRVL low.
Input Supply. A 1.0 m F ceramic capacitor should be connected from this pin to PGND.
Input Supply. A 1.0 m F ceramic capacitor should be connected from this pin to PGND.
Output drive for the lower MOSFET.
Power Ground. Should be closely connected to the source of the lower MOSFET.
Power Ground. Should be closely connected to the source of the lower MOSFET.
Switch Node. Connect to the source of the upper MOSFET.
Output drive for the upper MOSFET.
http://onsemi.com
2
相关PDF资料
PDF描述
NCP3418DR2 IC MOSFET DRIVER DUAL 12V 8-SOIC
NCP3420DR2G IC MOSFET DRIVER DUAL 12V 8-SOIC
NCP3488DR2G IC MOSFET DRVR DUAL 12V 8-SOIC
NCP5007SNT1 IC LED DRIVR WHT COMPACT 5TSOP
NCP5008DMR2 IC LED DRVR WHT BCKLT 10MICROSMD
相关代理商/技术参数
参数描述
NCP3418D 制造商:Rochester Electronics LLC 功能描述:- Bulk
NCP3418DR2 功能描述:IC MOSFET DRIVER DUAL 12V 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:95 系列:- 配置:半桥 输入类型:PWM 延迟时间:25ns 电流 - 峰:1.6A 配置数:1 输出数:2 高端电压 - 最大(自引导启动):118V 电源电压:9 V ~ 14 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:管件 产品目录页面:1282 (CN2011-ZH PDF) 其它名称:*LM5104M*LM5104M/NOPBLM5104M
NCP3418DR2G 功能描述:功率驱动器IC ANA 12V MOSFET DR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
NCP3418PDR2 制造商:Rochester Electronics LLC 功能描述:- Bulk
NCP341MUTBG 制造商:ON Semiconductor 功能描述:Controlled Load Switch Soft-Start