参数资料
型号: NCP362AMUTBG
厂商: ON Semiconductor
文件页数: 12/16页
文件大小: 0K
描述: IC OCP/OCP TVS USB POS 10-UDFN
标准包装: 3,000
应用: 过压保护控制器
电源电压: 1.2 ~ 20 V
电流 - 电源: 20µA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 10-UFDFN 裸露焊盘
供应商设备封装: 10-UDFN(2.5x2)
包装: 带卷 (TR)
NCP362
IEC 61000 ? 4 ? 2 Spec.
Test First Peak
Voltage Current
Level (kV) (A)
Current at
30 ns (A)
Current at
60 ns (A)
I peak
100%
90%
IEC61000 ? 4 ? 2 Waveform
1
2
7.5
4
2
2
3
4
4
6
8
15
22.5
30
8
12
16
4
6
8
I @ 30 ns
I @ 60 ns
10%
t P = 0.7 ns to 1 ns
Figure 26. IEC61000 ? 4 ? 2 Spec
ESD Gun
TVS
Oscilloscope
50 W
50 W
Cable
Figure 27. Diagram of ESD Test Setup
The following is taken from Application Note
AND8308/D ? Interpretation of Datasheet Parameters
for ESD Devices.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000 ? 4 ? 2 waveform. Since the
IEC61000 ? 4 ? 2 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping
voltage at the device level. ON Semiconductor has
developed a way to examine the entire voltage waveform
across the ESD protection diode over the time domain of
an ESD pulse in the form of an oscilloscope screenshot,
which can be found on the datasheets for all ESD protection
diodes. For more information on how ON Semiconductor
creates these screenshots and how to interpret them please
refer to AND8307/D.
100
90
80
70
60
50
40
30
20
10
t r
t P
PEAK VALUE I RSM @ 8 m s
PULSE WIDTH (t P ) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 m s
HALF VALUE I RSM /2 @ 20 m s
0
0
20
40
60
80
t, TIME ( m s)
Figure 28. 8 X 20 m s Pulse Waveform
http://onsemi.com
12
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