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参数资料
| 型号： | NCP362AMUTBG |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/16页 |
| 文件大小： | 0K |
| 描述： | IC OCP/OCP TVS USB POS 10-UDFN |
| 标准包装： | 3,000 |
| 应用： | 过压保护控制器 |
| 电源电压： | 1.2 ~ 20 V |
| 电流 - 电源： | 20µA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-UFDFN 裸露焊盘 |
| 供应商设备封装： | 10-UDFN（2.5x2） |
| 包装： | 带卷 (TR) |
NCP362
ELECTRICAL CHARACTERISTICS
(Min/Max limits values ( ? 40 ° C < T A < +85 ° C) and V in = +5.0 V. Typical values are T A = +25 ° C, unless otherwise noted.)
Characteristic
Input Voltage Range
Undervoltage Lockout Threshold
Uvervoltage Lockout Hysteresis
Overvoltage Lockout Threshold
Symbol
V in
UVLO
UVLO hyst
OVLO
Conditions
V in falls below UVLO threshold
V in rises above OVLO threshold
Min
1.2
2.85
50
5.43
Typ
3.0
70
5.675
Max
20
3.15
90
5.9
Unit
V
V
mV
V
Overvoltage Lockout Hysteresis
V in versus V out Dopout
OVLO hyst
V drop
V in = 5 V, I charge = 500 mA
50
100
150
125
200
mV
mV
Overcurrent Limit
Supply Quiescent Current
Standby Current
I lim
Idd
I std
V in = 5 V
No Load, V in = 5.25 V
V in = 5 V, EN = 1.2 V
550
750
20
26
950
35
37
mA
m A
m A
Zero Gate Voltage Drain Current
FLAG Output Low Voltage
FLAG Leakage Current
EN Voltage High
EN Voltage Low
EN Leakage Current
I DSS
Vol flag
FLAG leak
V ih
V il
EN leak
V DS = 20 V, V GS = 0 V
V in > OVLO
Sink 1 mA on FLAG pin
FLAG level = 5 V
V in from 3.3 V to 5.5 V
V in from 3.3 V to 5.5 V
EN = 5.5 V or GND
1.2
0.08
5.0
170
400
0.55
m A
mV
nA
V
V
nA
TIMINGS
Start Up Delay
FLAG going up Delay
Output Turn Off Time
Alert Delay
Disable Time
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
t on
t start
t off
t stop
t dis
T sd
T sdhyst
From V in > UVLO to V out = 0.8xV in , See Fig 3 & 9
From V in > UVLO to FLAG = 1.2 V, See Fig 3 & 10
From V in > OVLO to V out ≤ 0.3 V, See Fig 4 & 11
V in increasing from 5 V to 8 V at 3 V/ m s.
From V in > OVLO to FLAG ≤ 0.4 V, See Fig 4 & 12
V in increasing from 5 V to 8 V at 3 V/ m s
From EN 0.4 to 1.2V to V out ≤ 0.3 V, See Fig 5 & 13
V in = 4.75 V.
4.0
3.0
0.7
1.0
3.0
150
30
15
1.5
ms
m s
m s
m s
m s
° C
° C
ESD DIODES (T A = 25 ° C, unless otherwise noted)
Capacitance (Note 7)
Pin V BUS TVS
Pins D+ & D ?
C
30
0.5
0.9
pF
Clamping Voltage (Notes 5, 6, 7)
Pin V BUS TVS
Pins D+ & D ?
Working Peak Reverse Voltage
(Note 7)
V C
V RWM
@ I PP = 5.9 A
@ I PP = 1.0 A
23.7
9.8
V
V
Pin V BUS TVS
Pins D+ & D ?
12
5.0
Maximum Reverse Leakage
Current
Breakdown Voltage (Note 4)
Pin V BUS TVS
Pins D+ & D ?
I R
V BR
@ V RWM
@ I T = 1.0 mA
13.5
5.4
1.0
m A
V
4.
5.
6.
7.
V BR is measured with a pulse test current I T at an ambient temperature of 25 ° C.
Surge current waveform per Figure 28 in ESD paragraph.
For test procedures see Figures 26 and 27: IEC61000 ? 4 ? 2 spec, diagram of ESD test setup and Application Note AND8307/D.
ESD diode parameters are guaranteed by design.
http://onsemi.com
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