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参数资料
| 型号： | NCP362BMUTBG |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 参考电压二极管 |
| 英文描述： | OVP/OCP + TVS |
| 中文描述： | UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | 2.50 X 2 MM, LEAD FREE, CASE 517AV-01, 10 PIN |
| 文件页数： | 12/16页 |
| 文件大小： | 722K |
| 代理商： | NCP362BMUTBG |
NCP362
http://onsemi.com
5
ELECTRICAL CHARACTERISTICS
(Min/Max limits values (40°C < TA < +85°C) and Vin = +5.0 V. Typical values are TA = +25°C, unless otherwise noted.)
Characteristic
Symbol
Conditions
Min
Typ
Max
Unit
Input Voltage Range
Vin
1.2
20
V
Undervoltage Lockout Threshold
UVLO
Vin falls below UVLO threshold
2.85
3.0
3.15
V
Uvervoltage Lockout Hysteresis
UVLOhyst
50
70
90
mV
Overvoltage Lockout Threshold
OVLO
Vin rises above OVLO threshold
5.43
5.675
5.9
V
Overvoltage Lockout Hysteresis
OVLOhyst
50
100
125
mV
Vin versus Vout Dopout
Vdrop
Vin = 5 V, I charge = 500 mA
150
200
mV
Overcurrent Limit
Ilim
Vin = 5 V
550
750
950
mA
Supply Quiescent Current
Idd
No Load, Vin = 5.25 V
20
35
mA
Standby Current
Istd
Vin = 5 V, EN = 1.2 V
26
37
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
0.08
mA
FLAG Output Low Voltage
Volflag
Vin > OVLO
Sink 1 mA on FLAG pin
400
mV
FLAG Leakage Current
FLAGleak
FLAG level = 5 V
5.0
nA
EN Voltage High
Vih
Vin from 3.3 V to 5.5 V
1.2
V
EN Voltage Low
Vil
Vin from 3.3 V to 5.5 V
0.55
V
EN Leakage Current
ENleak
EN = 5.5 V or GND
170
nA
TIMINGS
Start Up Delay
ton
4.0
15
ms
FLAG going up Delay
tstart
3.0
ms
Output Turn Off Time
toff
Vin increasing from 5 V to 8 V at 3 V/ms.
0.7
1.5
ms
Alert Delay
tstop
Vin increasing from 5 V to 8 V at 3 V/ms
1.0
ms
Disable Time
tdis
Vin = 4.75 V.
3.0
ms
Thermal Shutdown Temperature
Tsd
150
°C
Thermal Shutdown Hysteresis
Tsdhyst
30
°C
ESD DIODES (TA = 25°C, unless otherwise noted)
Capacitance (Note 7)
Pin VBUS TVS
Pins D+ & D
C
30
0.5
0.9
pF
Clamping Voltage (Notes 5, 6, 7)
Pin VBUS TVS
Pins D+ & D
VC
@ IPP = 5.9 A
@ IPP = 1.0 A
23.7
9.8
V
Working Peak Reverse Voltage
(Note 7)
Pin VBUS TVS
Pins D+ & D
VRWM
12
5.0
V
Maximum Reverse Leakage
Current
IR
@ VRWM
1.0
mA
Breakdown Voltage (Note 4)
Pin VBUS TVS
Pins D+ & D
VBR
@ IT = 1.0 mA
13.5
5.4
V
4. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
5. Surge current waveform per Figure 28 in ESD paragraph.
6. For test procedures see Figures 26 and 27: IEC6100042 spec, diagram of ESD test setup and Application Note AND8307/D.
7. ESD diode parameters are guaranteed by design.
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