参数资料
型号: NCP362BMUTBG
厂商: ON SEMICONDUCTOR
元件分类: 参考电压二极管
英文描述: OVP/OCP + TVS
中文描述: UNIDIRECTIONAL, SILICON, TVS DIODE
封装: 2.50 X 2 MM, LEAD FREE, CASE 517AV-01, 10 PIN
文件页数: 5/16页
文件大小: 722K
代理商: NCP362BMUTBG
NCP362
http://onsemi.com
13
PCB Recommendations
The NCP362 integrates a 500 mA rated PMOS FET, and
the PCB rules must be respected to properly evacuate the
heat out of the silicon. The UDFN PAD1 must be connected
to ground plane to increase the heat transfer if necessary
from an application standpoint. Of course, in any case, this
pad shall be not connected to any other potential.
By increasing PCB area, the RqJA of the package can be
decreased, allowing higher charge current to fill the battery.
Taking into account that internal bondings (wires
between package and silicon) can handle up to 1 A (higher
than thermal capability), the following calculation shows
two different example of current capability, depending on
PCB area:
With 280°C/W (without PCB area), allowing DC
current is 500 mA
With 210°C/W (200 mm2), the charge DC current
allows with a 85
°C ambient temperature is:
I =
√(TJ-TA)/(RqJA x RDSON)
I = 800 mA
In every case, we recommend to make thermal
measurement on final application board to make sure of the
final Thermal Resistance.
Figure 29.
270
0 25 50 75 100 125 150 175
qJA
C/W)
COPPER HEAT SPREADING AREA (mm2)
250
230
210
190
175
150
1 oz C.F.
310
290
200225 250275 300 325350
2 oz C.F.
1 oz Sim
2 oz Sim
Figure 30. Demo Board Layout
Top View
Bottom View
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