参数资料
型号: NCP5181PG
厂商: ON Semiconductor
文件页数: 10/12页
文件大小: 0K
描述: IC MOSFET DVR HIGH VOLT 8-DIP
标准包装: 50
配置: 半桥
输入类型: 非反相
延迟时间: 100ns
电流 - 峰: 1.4A
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 600V
电源电压: 10 V ~ 20 V
工作温度: -40°C ~ 125°C
安装类型: 通孔
封装/外壳: 8-DIP(0.300",7.62mm)
供应商设备封装: 8-PDIP
包装: 管件
其它名称: NCP5181PG-ND
NCP5181PGOS
NCP5181
TYPICAL CHARACTERISTICS
35
30
25
20
15
10
C load = 1 nF / Q = 15 nC
R gate = 10 W
R gate = 22 W
R gate = 0 W
60
50
40
30
20
C load = 2.2 nF / Q = 33 nC
R gate = 10 W
R gate = 22 W
R gate = 0 W
5.0
10
0
0
100
200
300
400
500
600
0
0
100
200
300
400
500
600
SWITCHING FREQUENCY (kHz)
Figure 30. ICC1 Consumption vs. Switching
Frequency with 15 nC Load on Each Driver
SWITCHING FREQUENCY (kHz)
Figure 31. ICC1 Consumption vs. Switching
Frequency with 33 nC Load on Each Driver
80
70
60
50
40
C load = 3.3 nF / Q = 50 nC
R gate = 22 W
R gate = 10 W
R gate = 0 W
140
120
100
80
C load = 6.6 nF / Q = 100 nC
R gate = 22 W
R gate = 10 W
R gate = 0 W
30
20
10
60
40
20
0
0
100
200
300
400
500
600
0
0
100
200
300
400
500
600
SWITCHING FREQUENCY (kHz)
Figure 32. ICC1 Consumption vs. Switching
Frequency with 50 nC Load on Each Driver
http://onsemi.com
10
SWITCHING FREQUENCY (kHz)
Figure 33. ICC1 Consumption vs. Switching
Frequency with 100 nC Load on Each Driver
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