参数资料
| 型号： | NCP5217AMNTXG |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/16页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM 14-QFN |
| 标准包装： | 3,000 |
| PWM 型： | 电流/电压模式 |
| 输出数： | 1 |
| 频率 - 最大： | 330kHz |
| 电源电压： | 4.5 V ~ 27 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 14-VFQFN 裸露焊盘 |
| 包装： | 带卷 (TR) |
| 其它名称： | NCP5217AMNTXG-ND NCP5217AMNTXGOSTR |
NCP5217A
ELECTRICAL CHARACTERISTICS (V IN = 12 V, V CC = 5 V, T A = ? 40 ° C to 85 ° C, unless other noted)
Characteristics
Symbol
Test Conditions
Min
Typ
Max
Unit
SUPPLY VOLTAGE
Input Voltage
V CC Operating Voltage
V IN
V CC
4.5
4.5
?
5.0
27
5.5
V
V
SUPPLY CURRENT
V CC Quiescent Supply Current
in FPWM operation
V CC Quiescent Supply Current
in Power Saving Operation
V CC Shutdown Current
BST Quiescent Supply Current
in FPWM operation
BST Quiescent Supply Current
in power ? saving operation
BST Shutdown Current
dV/dt on V CC
IVCC_FPWM
IVCC_PS
IVCC_SD
IBST_FPWM
IBST_PS
IBST_SD
dVCC/dt
EN_SKIP = 2.0 V, V FB forced above
regulation point. DH, DL are open
EN_SKIP = 5 V, V FB forced above
regulation point, DH, DL are open
EN_SKIP = L, V CC = 5 V, true shutdown
EN_SKIP = 1.5 V, V FB forced above
regulation point, DH and DL are open,
No boost trap diode
EN_SKIP = 5 V, V FB forced above
regulation point, DH and DL are open
No boost trap diode
EN_SKIP = 0 V
(Note 2)
? 10
1.5
1.5
2.5
2.5
1
0.3
0.3
1
10
mA
mA
uA
mA
mA
m A
V/ m s
VOLTAGE ? MONITOR
Rising V CC Threshold
V CC UVLO Hysteresis
Power Good High Threshold
Power Good High Hysteresis
Power Good Low Threshold
Power Good Low Hysteresis
VCCth+
VCCHYS
VPGH
VPGH_HYS
VPGL
VPGL_HYS
Wake Up
PGOOD in from higher Vo
(PGOOD goes high)
PGOOD high hysteresis
(PGOOD goes low)
PGOOD in from lower Vo
(PGOOD goes high)
PGOOD low hysteresis
(PGOOD goes low)
4.05
200
105
80
4.25
275
110
5
85
? 5
4.48
400
115
90
V
mV
%
%
%
%
Power Good High Delay
Power Good Low Delay
Td_PGH
Td_PGL
150
1.5
us
us
Output Overvoltage Rising
Threshold
Overvoltage Fault Propagation
Delay
Output Undervoltage Trip
Threshold
Output Undervoltage Protection
Blanking Time
OVPth+
OVPTblk
UVPth
UVPTblk
With respect to Error Comparator
Threshold of 0.8 V
FB forced 2% above trip threshold
With respect to Error Comparator
Threshold of 0.8 V
110
75
?
115
1.5
80
8/f SW
120
85
?
%
us
%
s
REFERENCE OUTPUT
Internal Reference Voltage
VREF
0.7936
0.8
0.8064
V
OSCILLATOR
Operation Frequency
FSW
270
300
330
kHz
OVERCURRENT THRESHOLD DETECTION
Total Detection Time
OCSET Detection Time
T DETECT
T_OCDET
A short period before SS
(Note 2)
1.26
1.09
1.92
2.21
1.47
ms
ms
2. Guaranteed by design, not tested in production.
http://onsemi.com
4
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