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| 型号： | NCP5355DR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | IC DRVR MOSF SYNC BUCK 12V 8SOIC |
| 产品变化通告： | Product Discontinuation 01/Oct/2008 |
| 标准包装： | 2,500 |
| 配置： | 高端和低端，同步 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 30ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 26V |
| 电源电压： | 9.2 V ~ 13.2 V |
| 工作温度： | 0°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | NCP5355DR2GOS |
NCP5355
12 V Synchronous Buck
Power MOSFET Driver
The NCP5355 is a dual MOSFET gate driver optimized to drive the
gates of both high? and low?side Power MOSFETs in a Synchronous
Buck converter. The NCP5355 is an excellent companion to
multiphase controllers that do not have integrated gate drivers, such as
ON Semiconductor ’s NCP5314 or NCP5316. This architecture
provides the power supply designer greater flexibility by being able to
locate the gate drivers close to the MOSFETs.
Driving MOSFETs with a 12 V source as opposed to a 5.0 V can
significantly reduce conduction losses. Optimized internal, adaptive
http://onsemi.com
MARKING
DIAGRAMS
8
nonoverlap circuitry further reduces switching losses by preventing
SOIC?8
5355
simultaneous conduction of both MOSFETs.
The floating top driver design can accommodate MOSFET drain
voltages as high as 26 V. Both gate outputs can be driven low by
applying a low logic level to the Enable (EN) pin. An Undervoltage
Lockout function ensures that both driver outputs are low when the
supply voltage is low, and a Thermal Shutdown function provides the
IC with overtemperature protection.
8
8
1
1
D SUFFIX
CASE 751
SOIC?8 EP
D SUFFIX
CASE 751AC
1
8
ALYW
5355
ALYW
The NCP5355 has the same pinout as the NCP5351 5.0 V
Gate Driver.
Features
? 8.0 V ? 14 V Gate Drive Capability
? 2.0 A Peak Drive Current
? Rise and Fall Times < 15 ns Typical into 3300 pF
? Propagation Delay from Inputs to Outputs < 30 ns
? Adaptive Nonoverlap Time Optimized for Large Power MOSFETs
? Floating Top Driver Accommodates Applications Up to 26 V
? Undervoltage Lockout to Prevent Switching when the Input
Voltage is Low
? Thermal Shutdown Protection Against Overtemperature
? TG to DRN Pulldown Resistor Prevents HV Supply?Induced
1
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
PIN CONNECTIONS
1 8
DRN PGND
TG BG
BST V S
CO EN
?
Turn?On of Top MOSFET
BG to PGND Pulldown Resistor Prevents Transient Turn On of
ORDERING INFORMATION
Device Package Shipping ?
?
?
Bottom MOSFET
Internal Bootstrap Diode Reduces Parts Count and Total
Solution Cost
Pb?Free Package is Available
NCP5355D
NCP5355DR2
NCP5355DR2G
NCP5355PDR2
SOIC?8
SOIC?8
SOIC?8
(Pb?Free)
SOIC?8 EP
98 Units/Rail
2500 / Tape & Reel
2500 / Tape & Reel
2500 / Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2004
December, 2004 ? Rev. 7
1
Publication Order Number:
NCP5355/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCP5355PDR2 | 功能描述:功率驱动器IC 12V 2A Buck Power RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCP5358MNTXG | 功能描述:开关变换器、稳压器与控制器 GATE DRIVERS FOR NOTEBOOK RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| NCP5359 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Gate Driver for Notebook Power Systems |
| NCP5359A | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Gate Driver for Notebook Power Systems |
| NCP5359ADR2G | 功能描述:功率驱动器IC DUAL MOSFET GATE DRIVER RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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