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参数资料
| 型号： | NCP5355DR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | IC DRVR MOSF SYNC BUCK 12V 8SOIC |
| 产品变化通告： | Product Discontinuation 01/Oct/2008 |
| 标准包装： | 2,500 |
| 配置： | 高端和低端，同步 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 30ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 26V |
| 电源电压： | 9.2 V ~ 13.2 V |
| 工作温度： | 0°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | NCP5355DR2GOS |
NCP5355
MAXIMUM RATINGS
Rating
Operating Junction Temperature, T J
Package Thermal Resistance: SOIC?8
Junction?to?Case, R q JC
Junction?to?Ambient, R q JA
Package Thermal Resistance: SOIC?8 EP
Junction?to?Ambient, R q JA (Note 1)
Storage Temperature Range, T S
Lead Temperature Soldering: Reflow: (SMD styles only) (Note 2)
JEDEC Moisture Sensitivity
Value
Internally Limited
45
165
50
?65 to 150
230 peak
1
Unit
° C
° C/W
° C/W
° C/W
° C
° C
?
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
NOTE: This device is ESD sensitive. Use standard ESD precautions when handling.
1. Ratings applies when soldered to an appropriate thermal area on the PCB.
2. 60 seconds maximum above 183 ° C.
MAXIMUM RATINGS
Pin Symbol
V S
Pin Name
Main Supply Voltage Input
V MAX
15 V
V MIN
?0.3 V
I SOURCE
NA
I SINK
2.0 A Peak (< 100 m s)
250 mA DC
BST
Bootstrap Supply Voltage
30 V wrt/PGND
?0.3 V wrt/DRN
NA
2.0 A Peak (< 100 m s)
Input
15 V wrt/DRN
250 mA DC
DRN
Switching Node
26 V
?1.0 V DC
2.0 A Peak (< 100 m s)
NA
(Bootstrap Supply Return)
?5.0 V for 100 ns
?6.0 V for 20 ns
250 mA DC
TG
BG
High?Side Driver Output
(Top Gate)
Low?Side Driver Output
30 V wrt/PGND
15 V wrt/DRN
15 V
?0.3 V wrt/DRN
?0.3 V
2.0 A Peak (< 100 m s)
250 mA DC
2.0 A Peak (< 100 m s)
2.0 A Peak (< 100 m s)
250 mA DC
2.0 A Peak (< 100 m s)
(Bottom Gate)
250 mA DC
250 mA DC
CO
EN
PGND
TG and BG Control Input
Enable Input
Ground
5.5 V
5.5 V
0V
?0.3 V
?0.3 V
0V
1.0 mA
1.0 mA
2.0 A Peak (< 100 m s)
1.0 mA
1.0 mA
NA
250 mA DC
NOTE:
All voltages are with respect to PGND except where noted.
http://onsemi.com
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