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| 型号： | NCP5359ADR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET GATE DVR DUAL 8-SOIC |
| 标准包装： | 1 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 10ns |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 30V |
| 电源电压： | 10 V ~ 13.2 V |
| 工作温度： | 0°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | NCP5359ADR2GOSDKR |
NCP5359A
Gate Driver for Notebook
Power Systems
The NCP5359A is a high performance dual MOSFET gate driver
optimized to drive the gates of both high ? side and low ? side power
MOSFETs in a synchronous buck converter. Each of the drivers can
drive up to 3 nF load with a 25 ns propagation delay and 15 ns
http://onsemi.com
G
transition time.
Adaptive nonoverlap and power saving operation circuit can
provide a low switching loss and high efficiency solution for notebook
and desktop systems.
A high floating top driver design can accommodate VBST voltage
as high as 35 V, with transient voltages as high as 35 V. Bidirectional
EN pin can provide a fault signal to controller when the gate driver
fault detect under OVP, UVLO occur. Also, an undervoltage lockout
function guarantees the outputs are low when supply voltage is low,
and a thermal shutdown function provides the IC with
overtemperature protection.
8
1
A
L
Y
W
G
MARKING
DIAGRAMS
8
SOIC ? 8 5359A
D SUFFIX ALYW
CASE 751
1
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb ? Free Package
Features
? Faster Rise and Fall Times
? Thermal Shutdown Protection
? Adaptive Nonoverlap Circuit
? Floating Top Driver Accommodates Boost Voltages of up to 30 V
? Output Disable Control Turns Off Both MOSFETs
? Complies with VRM 11.1 Specifications
? Undervoltage Lockout
? Power Saving Operation Under Light Load Conditions
? Thermally Enhanced Package
? These are Pb ? Free Devices
1
DFN8
MN SUFFIX
CASE 506AA
AA = Device Code
M = Date Code
G = Pb ? Free Package
PIN CONNECTIONS
1 8
BST DRVH
PWM SW
EN GND
V CC DRVL
1
4
Typical Applications
? Power Solutions for Desktop and Notebook Systems
BST
1
8
DRVH
PWM
EN
V CC
SW
GND
DRVL
(Top View)
ORDERING INFORMATION
Device
NCP5359ADR2G
NCP5359AMNR2G
NCP5359AMNTBG
Package
SOIC ? 8
(Pb ? Free)
DFN8
(Pb ? Free)
DFN8
Shipping ?
2500 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2009
September, 2009 ? Rev. 1
1
Publication Order Number:
NCP5359A/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCP5359AMNR2G | 功能描述:功率驱动器IC DUAL MOSFET GATE DRIVER RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCP5359AMNTBG | 功能描述:功率驱动器IC DUAL MOSFET GATE DRIVER RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCP5359DR2G | 功能描述:功率驱动器IC SINGLE GATE DRIVER RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCP5359MNR2G | 功能描述:功率驱动器IC SINGLE GATE DRIVER RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCP5360AMNR2G | 功能描述:功率驱动器IC NCP5360A 48A SETUP RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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