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| 型号： | NCP5359DR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | IC GATE DRIVER VR11.1/AMD 8-SOIC |
| 产品变化通告： | NCP5359 Electrical Change 15/Sept/2008 |
| 标准包装： | 1 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 10ns |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 35V |
| 电源电压： | 10 V ~ 13.2 V |
| 工作温度： | 0°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | NCP5359DR2GOSDKR |
NCP5359
Gate Driver for Notebook
Power Systems
The NCP5359 is a high performance dual MOSFET gate driver
optimized to drive the gates of both high ? side and low ? side power
MOSFETs in a synchronous buck converter. Each of the drivers can
drive up to 3 nF load with a 25 ns propagation delay and 20 ns
transition time.
Adaptive nonoverlap and power saving operation circuit can
provide a low switching loss and high efficiency solution for notebook
and desktop systems.
http://onsemi.com
MARKING
DIAGRAMS
8
A high floating top driver design can accommodate VBST voltage
as high as 35 V, with transient voltages as high as 35 V. Bidirectional
EN pin can provide a fault signal to controller when the gate driver
fault detect under OVP, UVLO occur. Also, an undervoltage lockout
8
1
SOIC ? 8
D SUFFIX
CASE 751
1
N5359
ALYW
G
function guarantees the outputs are low when supply voltage is low,
and a thermal shutdown function provides the IC with
overtemperature protection.
DFN ? 10
MN SUFFIX
N5359
ALYW
Features
? Faster Rise and Fall Times
? Thermal Shutdown Protection
? Adaptive Nonoverlap Circuit
? Floating Top Driver Accommodates Boost Voltages of up to 35 V
? Output Disable Control Turns Off Both MOSFETs
? Complies with VRM 11.1 Specifications
? Undervoltage Lockout
? Power Saving Operation Under Light Load Conditions
? Thermally Enhanced Package
? These are Pb ? Free Devices
CASE 485C G
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb ? Free Package
PIN CONNECTIONS
1 8
BST DRVH
PWM SW
EN GND
Typical Applications
? Power Solutions for Desktop and Notebook Systems
V CC
1
10
DRVL
BST
PWM
EN
V CC
V CC
DRVH
SW
GND
GND
DRVL
(Top View)
ORDERING INFORMATION
Device
NCP5359DR2G
NCP5359MNR2G
Package
SOIC ? 8
(Pb ? Free)
DFN ? 10
Shipping ?
2500 Tape & Reel
3000 Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2009
February, 2009 ? Rev. 3
1
Publication Order Number:
NCP5359/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCP5359MNR2G | 功能描述:功率驱动器IC SINGLE GATE DRIVER RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCP5360AMNR2G | 功能描述:功率驱动器IC NCP5360A 48A SETUP RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCP5360RMNR2G | 功能描述:功率驱动器IC INTEGRATED DRIVER MOSFET RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCP5366MNR2G | 功能描述:功率驱动器IC INTEGRATED DRIVER MOSFET RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCP5369 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Integrated Driver and MOSFET |
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