参数资料
型号: NCP5359DR2G
厂商: ON Semiconductor
文件页数: 8/9页
文件大小: 0K
描述: IC GATE DRIVER VR11.1/AMD 8-SOIC
产品变化通告: NCP5359 Electrical Change 15/Sept/2008
标准包装: 1
配置: 高端和低端,同步
输入类型: PWM
延迟时间: 10ns
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 35V
电源电压: 10 V ~ 13.2 V
工作温度: 0°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 标准包装
其它名称: NCP5359DR2GOSDKR
NCP5359
PACKAGE DIMENSIONS
DFN10, 3x3
MN SUFFIX
CASE 485C ? 01
ISSUE B
(Optional)
2X
10X
PIN 1
REFERENCE
0.15 C
2X 0.15 C
0.10 C
0.08 C
D
TOP VIEW
DETAIL B
SIDE VIEW
(A3)
A
B
E
A1
A
C
EDGE OF PACKAGE
L1
DETAIL A
Bottom View
(Optional)
EXPOSED Cu
MOLD CMPD
A1
DETAIL B
SEATING Side View
PLANE
A3
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.25 AND 0.30 MM FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
5. TERMINAL b MAY HAVE MOLD COMPOUND
MATERIAL ALONG SIDE EDGE. MOLD
FLASHING MAY NOT EXCEED 30 MICRONS
ONTO BOTTOM SURFACE OF TERMINAL b.
6. DETAILS A AND B SHOW OPTIONAL VIEWS
FOR END OF TERMINAL LEAD AT EDGE OF
PACKAGE.
MILLIMETERS
DIM MIN MAX
A 0.80 1.00
A1 0.00 0.05
A3 0.20 REF
b 0.18 0.30
D 3.00 BSC
D2 2.40 2.60
E 3.00 BSC
E2 1.70 1.90
e 0.50 BSC
K 0.19 TYP
10X
L
1
e
D2
5
DETAIL A
L 0.35 0.45
L1 0.00 0.03
SOLDERING FOOTPRINT*
2.6016
10X
K
E2
10X
b
10
6
2.1746
1.8508
3.3048
0.10 C A B
BOTTOM VIEW
0.05 C
NOTE 3
10X
0.5651
10X
0.3008
0.5000 PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb ? Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
8
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