参数资料
型号: NCP5359DR2G
厂商: ON Semiconductor
文件页数: 4/9页
文件大小: 0K
描述: IC GATE DRIVER VR11.1/AMD 8-SOIC
产品变化通告: NCP5359 Electrical Change 15/Sept/2008
标准包装: 1
配置: 高端和低端,同步
输入类型: PWM
延迟时间: 10ns
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 35V
电源电压: 10 V ~ 13.2 V
工作温度: 0°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 标准包装
其它名称: NCP5359DR2GOSDKR
NCP5359
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Thermal Characteristics, Plastic Package
Thermal Resistance Junction ? to ? Air
Operating Junction Temperature Range
Operating Ambient Temperature Range
Storage Temperature Range
Moisture Sensitivity Level
SOIC ? 8
DFN10
SOIC ? 8
DFN10
R q JA
T J
T A
T stg
MSL
178
45
0 to +150
0 to +85
? 55 to +150
3
1
° C/W
° C
° C
° C
?
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
MAXIMUM RATINGS
Pin Symbol
Vcc
BST
Pin Name
Main Supply Voltage Input
Bootstrap Supply voltage
V MAX
15 V
35 V wrt / GND
V MIN
? 0.3 V
? 0.3 V
40 V ≤ 50 ns wrt / GND
15V wrt / SW
SW
DRVH
Switching Node
(Bootstrap Supply Return)
High Side Driver Output
35 V wrt / GND
40 V ≤ 50 ns wrt / GND
BST + 0.3 V
35 V ≤ 50 ns wrt / GND
? 1 VDC
? 10 V (200 ns) (Note 4)
? 0.3 V
? 2 V (200 ns)
15V wrt / SW
DRVL
Low Side Driver Output
Vcc + 0.3 V
? 0.3 V
? 5 V (200 ns)
PWM
EN
GND
DRVH and DRVL Control Input
Enable Pin
Ground
6V
6V
0V
? 0.3 V
? 0.3 V
0V
PD +
R q JA
1. Latchup Current Maximum Rating: 100 mA per JEDEC standard: JESD78.
2. Moisture Sensitivity Level (MSL): 1&3 per IPC/JEDEC standard: J ? STD ? 020A.
3. The maximum package power dissipation limit must not be exceeded.
TJ(max) * TA
4. Switching node negative voltage is ? 5 V ( 200 ns) at PSI mode.
NOTE: This device is ESD sensitive. Use standard ESD precautions when handling.
http://onsemi.com
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