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参数资料
| 型号： | NCP5810DGEVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/14页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD FOR NCP5810DG |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 1 |
| 主要目的： | DC/DC，正向和负向 |
| 输出及类型： | 2，非隔离 |
| 功率 - 输出： | 1W |
| 输出电压： | 4.6V，-5V |
| 输入电压： | 3.7V |
| 稳压器拓扑结构： | 反相 |
| 频率 - 开关： | 1.75MHz |
| 板类型： | 完全填充 |
| 已供物品： | 板 |
| 已用 IC / 零件： | NCP5810 |
| 其它名称： | NCP5810DGEVBOS |
NCP5810D
ELECTRICAL CHARACTERISTICS Min & Max Limits apply for T A between -40 ° C to +85 ° C and V IN between 2.7 V to 4.6 V (Unless
otherwise noted). Typical values are referenced to T A = +25 ° C and V IN = 3.7 V (Unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
BOOST REGULATOR
Positive Operational Output Voltage Range
Maximum Inductor Peak Current
Switches P0 ON Resistance
V OUTP
I PEAKP_MAX
P0 MOS
4.55
630
-
4.6
800
320
4.65
900
640
V
mA
m W
R DSON
Switches N1 ON Resistance
N 1MOS
-
300
600
m W
R DSON
Switches N1 Leakage Current
N 1MOS L
-
0.05
0.5
m A
At V IN = 4.2 V
Efficiency (Notes 8, 9)
E FF
-
85
-
%
V OUTP Range Load Current (Notes 9, 10)
I OUTP
mA
-
270
-
VIN ≥ 3.2 V, T A between 0 to +85 ° C
VIN ≥ 2.9 V, T A between 0 to +85 ° C
-
-
-
-
230
200
Output Voltage Line Regulation I OUTP = 0 mA
L INE_RP
-
-
10
mV
2.7 < V IN < 4.6
Output Voltage Line Transient Overshoot (Note 12)
L INE_TP
-
4.0
-
mV
P SRRP
dB
1.0 Hz to 1.0 kHz
1.0 kHz to 10 kHz
-
-
60
40
-
-
Output Voltage Load Regulation (Note 14)
Output Voltage Load Transient Response: Overshoot and
L OAD_RP
L TRP
-
-
-
-
0.5
100
%/100mA
mV
BUCK/BOOST REGULATOR
Typical Negative Operational Output Voltage Range
Peak Inductor Current (Note 9)
Switches P2 ON Resistance
V OUTN
I PEAKN_MAX
P 2MOS
-15
720
-
-
900
1.0
-2.0
1020
2.0
V
mA
W
R DSON
Switches P2 Leakage Current
P 2MOS L
-
0.05
0.5
m A
At V IN = 4.2 V
Efficiency (Notes 8, 9)
E FF
-
80
-
%
V OUTN Range Load Power (Notes 9, 10)
P OUTN
mW
-
1000
-
VIN ≥ 3.2 V, T A between 0 to +85 ° C
VIN ≥ 2.9 V, T A between 0 to +85 ° C
-
-
-
-
800
700
Output Voltage Reference 0 m A < I REF < 100 m A
Feedback Voltage Threshold in Steady State:
O VR
F BVN
-1 %
-2 %
1.265
0.632
+1 %
+2 %
V
mV
2.7 < V IN < 4.6
Feedback Input Current
Output Voltage Line Regulation at I OUTN = 0 mA (Note 11)
F BICN
L INE_RN
-50
-
-
-
50
20
nA
mV
2.7 < V IN < 4.6
Output Voltage Line Transient Overshoot (Note 12)
L INE_TN
-
4.0
-
mV
P SRRN
dB
1.0 Hz to 1.0 kHz
1.0 kHz to 10 kHz
-
-
60
40
-
-
Load Regulation (Notes 11, 14)
Load Transient Response: Overshoot and Undershoot Vs.
L OAD RN
L TRN
-
-
-
-
0.5
100
%/100mA
mV
Steady State Voltage (Notes 9, 15)
http://onsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCP5810DGEVB | 制造商:ON Semiconductor 功能描述:NCP5810D EVALUATION BOARD ;ROHS COMPLIANT: NO |
| NCP5810DMUTXG | 功能描述:LED照明驱动器 DUAL AMOLED DRVR RoHS:否 制造商:STMicroelectronics 输入电压:11.5 V to 23 V 工作频率: 最大电源电流:1.7 mA 输出电流: 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:SO-16N |
| NCP5810MUTXG | 功能描述:直流/直流开关转换器 DUAL 1 W AMOLED DRVR SUPPLY RoHS:否 制造商:STMicroelectronics 最大输入电压:4.5 V 开关频率:1.5 MHz 输出电压:4.6 V 输出电流:250 mA 输出端数量:2 最大工作温度:+ 85 C 安装风格:SMD/SMT |
| NCP582DSQ15T1G | 功能描述:低压差稳压器 - LDO 1.5V 150mA w/Enable Low Noise RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| NCP582DSQ18T1G | 功能描述:低压差稳压器 - LDO 1.8V 150mA w/Enable Low Noise RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
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