参数资料
型号: NCP5810DGEVB
厂商: ON Semiconductor
文件页数: 6/14页
文件大小: 0K
描述: EVAL BOARD FOR NCP5810DG
产品变化通告: Product Obsolescence 14/Apr/2010
标准包装: 1
主要目的: DC/DC,正向和负向
输出及类型: 2,非隔离
功率 - 输出: 1W
输出电压: 4.6V,-5V
输入电压: 3.7V
稳压器拓扑结构: 反相
频率 - 开关: 1.75MHz
板类型: 完全填充
已供物品:
已用 IC / 零件: NCP5810
其它名称: NCP5810DGEVBOS
NCP5810D
ELECTRICAL CHARACTERISTICS (Min & Max Limits apply for T A between -40 ° C to +85 ° C and V IN between 2.7 V to 4.6 V.
Typical values are referenced to T A = +25 ° C and V IN = 3.7 V, unless otherwise noted)
Rating
Operational Power Supply
Internal Oscillator Frequency, T A = 25 ° C, V IN = 3.7 V
Maximum Duty Cycle
Stand by Current at I OUTP = I OUTN = 0 mA, EN = Low
V IN = 4.2 V, T A = +25 ° C
Symbol
V IN
F OSC
M DCY
I STB
Min
2.7
1.6
87
-
Typ
-
1.75
90
-
Max
4.6
1.9
-
2.0
Unit
V
MHz
%
m A
Quiescent Current @ V OUTN = -5.4 V @ T A = +25 ° C
I Q
mA
Switching (Note 9)
No Switching
-
-
1.5
1.0
3.0
-
Soft Start Time to limit the Inrush Current
Thermal Shut Down Protection
Thermal Shut Down Protection Hysteresis
Voltage Input Logic Low
Voltage Input Logics High
EN pin Pull Down Resistance
S ST
T SD
T SDH
V IL
V IH
R EN
-
-
-
-
1.2
280
2.0
165
15
-
-
400
-
-
-
0.4
-
670
ms
° C
° C
V
V
k W
NOTES:
8. Efficiency is defined by 100 * (Pout / Pin), Vin = 3.1 to 4.2 V, L = VLF3010AT-4R7MR70 (DCR = 280 m W max, Isat = 700 mA), Load = 15 to
30 mA, Voutn = -5.4 V.
9. Guaranteed by design and characterized.
10. Typical application circuit and components depicted Figure 1.
11. Tested at 25 ° C and guaranteed from -40 ° C to +85 ° C by characterization.
12. Line drop and rise between 3.4 to 2.9 V in 50 m s at I OUT = 25 mA, V OUTN = -5.4 V.
13. Ripple = 0.2 V p-p at 25 ° C, Cout = 4.7 m F, I OUT = 0 to 100 mA, V IN = 3.7 V.
14. I OUT from 0 to 100 mA.
15. Load step 10 to 90 mA and 90 to 10 mA, rising and falling edge in 10 m s, Cout = 4.7 m F, V IN = 3.7 V.
16. Maximum range load (I OUTN_MAX ) is dependent by the output voltage setup (V OUTN ), P OUTN for a given condition and work out by equation
below.
I OUTN_MAX +
P OUTN
V OUTN
For example, should one need setup - 4.9 for V OUTN , at V IN ≥ 3.2 V,
I OUTN_MAX +
0.8
4.9
+ 163 mA
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