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参数资料
| 型号： | NCS36000DRG |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | IC PIR DETECTOR CTLR 14SOIC |
| 标准包装： | 1 |
| 类型： | 检测器控制器 |
| 输入类型： | 数字 |
| 输出类型： | 数字 |
| 接口： | CMOS |
| 电流 - 电源： | 50µA |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 14-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 14-SOICN |
| 包装： | 标准包装 |
| 其它名称： | NCS36000DRGOSDKR |
NCS36000
http://onsemi.com
3
OPERATING RANGES (Note 6)
Rating
Symbol
Min
Typ
Max
Unit
Analog Power Supply
VDD
3.0
5.0
5.75
V
Analog Ground Reference
VSS
0.0
0.1
V
Supply Current (Standby, No Loads)
IDD
170m
A
Digital Inputs (MODE)
Vih
0.7 *
VDD
VDD +
0.3
V
Vil
VSS
VDD *
0.28
Digital Output (OUT, LED)
PushPull Output (10 mA Load)
Voh
0.67 *
VDD
V
Vol
VSS
VDD *
0.3
OP1_P (Sensor Input) (Note 7)
AMP 1 IN
0.1
VDD
1.1
V
Ambient Temperature
TA
40
85
°C
6. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
7. Guaranteed By Design (Nontested parameter).
ELECTRICAL CHARACTERISTICS Vin = 1 V, Cin = 100 nF, Cout = 100 nF, for typical values TA = 25°C; unless otherwise noted.
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
LDO Voltage Reference
Output Voltage
VDD = 3.0 V to 5.75 V
VREF
2.6
2.7
2.8
V
Supply Current
VDD = 3.0 V to 5.75V
IREF
20
50
mA
Comparator High Trip Level
Vh
2.413
2.5
2.588
V
Comparator Low Trip Level
Vl
1.641
1.7
1.760
V
Reference voltage for noninverting input of
second amplifier
Vm
2.007
2.1
2.174
V
System Oscillator
Oscillator Frequency
VDD = 5.0 V
R3 = 220 kW
C2 = 100 nF
OSC
62.5
Hz
Window Comparator
Lower Trip Threshold
See Vl above
Higher Trip Threshold
See Vh above
Differential Amplifiers (Amplifier Circuit)
DC Gain
Av
80
dB
Commonmode Input Range
CMIR
0.1
VDD
1.1
V
Power Supply Rejection Ratio
PSRR
60
dB
Output Drive Current
Iout1
25
mA
POR
POR Release Voltage
VPOR
1.35
2.85
V
8. Guaranteed By Design (Nontested parameter).
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