参数资料
型号: NCS36000DRG
厂商: ON Semiconductor
文件页数: 7/8页
文件大小: 0K
描述: IC PIR DETECTOR CTLR 14SOIC
标准包装: 1
类型: 检测器控制器
输入类型: 数字
输出类型: 数字
接口: CMOS
电流 - 电源: 50µA
安装类型: 表面贴装
封装/外壳: 14-SOIC(0.154",3.90mm 宽)
供应商设备封装: 14-SOICN
包装: 标准包装
其它名称: NCS36000DRGOSDKR
NCS36000
http://onsemi.com
7
LED
OUT
OP2_O
OP2_N
OP1_O
OP1_N
OP1_P
VREF
VSS
xLED_EN
nc
VDD
OSC
MODE
1
2
3
4
5
6
7
14
13
12
11
10
9
8
G
D
Sensor dependent
components
Power Supply /
AC to DC Rectifier
R1
R2
R3
R4
C1
C2
C3
C4
C6
C5
R5
D1
R7
C7
J1
J2
R6
Microcontroller
Figure 9. Typical Application Diagram Using NCS36000
R1 = 10 kW
C1 = 33 mF
J1 (Jumper for xLED_EN)
R2 = 560 kW
C2 = 10 nF
J2 (Jumper for Mode Select)
R3 = 10 kW
C3 = 33 mF
D1 (LED)
R4 = 560 kW
C4 = 10 nF
R5 = 43 kW
C5 = 100 nF
R6 = 1 kW
C6 = 100 nF
R7 = 220 kW
C7 = 100 nF
9. R1, C1, R2, C2, R3, C3, R4, C4 setup bandpass filter characteristics. With components as shown above the passband gain is approximately
70 dB with the 3 dB cutoff frequency of the filter at approximately 700 mHz and 20 Hz.
10.R4 can be replaced by a potentiometer to adjust sensitivity of system. Note dynamically changing R4 will also change the pole location for
the second amplifier.
11. R5 and C5 are sensor dependant components and R6 may need to be adjusted to guarantee the AMP 1 IN parameter outlined within the
Operating Ranges section of this document.
12.R7 and C7 may be adjusted to change the oscillator frequency. R7 may not be smaller than 50 kW.
ORDERING INFORMATION
Device
Package
Shipping
NCS36000DG
SOIC14
(PbFree)
55 Units / Rail
NCS36000DRG
SOIC14
(PbFree)
3000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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