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| 型号： | NCV3066DR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/20页 |
| 文件大小： | 0K |
| 描述： | IC LED DRIVER HIGH BRIGHT 8-SOIC |
| 标准包装： | 2,500 |
| 恒定电流： | 是 |
| 拓扑： | PWM，降压（降压），升压（升压） |
| 输出数： | 1 |
| 内部驱动器： | 是 |
| 类型 - 主要： | 车载 |
| 类型 - 次要： | 高亮度 LED（HBLED） |
| 频率： | 100kHz ~ 250kHz |
| 电源电压： | 3 V ~ 40 V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 工作温度： | -40°C ~ 125°C |
NCP3066, NCV3066
MAXIMUM RATINGS (measured vs. Pin 4, unless otherwise noted)
Rating
VCC Pin 6
Comparator Inverting Input Pin 5
Darlington Switch Collector Pin 1
Darlington Switch Emitter Pin 2 (Transistor OFF)
Darlington Switch Collector to Emitter Pins 1 ? 2
Darlington Switch Current
I pk Sense Pin 7
Timing Capacitor Pin Voltage (Pin 3)
Moisture Sensitivity Level
Lead Temperature Soldering
ON/OFF Pin voltage
Symbol
V CC
V CII
V SWC
V SWE
V SWCE
I SW
V IPK
V TC
MSL
T SLD
V ON/OFF
Value
0 to +42
? 0.3 to + V CC
? 0.3 to + 42
? 0.6 to + V CC
? 0.3 to + 42
1.5
? 0.3 to V CC + 0.3
? 0.2 to +1.4
1
260
( ? 0.3 to +25) < V CC
Unit
V
V
V
V
V
A
V
V
?
° C
V
POWER DISSIPATION AND THERMAL CHARACTERISTICS
PDIP ? 8 (Note 5)
Thermal Resistance Junction ? to ? Air
SOIC ? 8 (Note 5)
Thermal Resistance Junction ? to ? Air
DFN ? 8 (Note 5)
Thermal Resistance Junction ? to ? Air
Thermal Resistance Junction ? to ? Case
Storage Temperature Range
Maximum Junction Temperature
Operating Junction Temperature Range (Note 3)
NCP3066
NCV3066
R q JA
R q JA
R q JA
R q JC
T STG
T JMAX
T J
100
180
78
14
? 65 to +150
+150
0 to +85
? 40 to +125
° C/W
° C/W
° C/W
° C
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series contains ESD protection and exceeds the following tests:
Pin 1 ? 8: Human Body Model 2000 V per AEC Q100 ? 002; 003 or JESD22/A114; A115
Machine Model Method 200 V
2. This device contains latch ? up protection and exceeds 100 mA per JEDEC Standard JESD78.
3. The relation between junction temperature, ambient temperature and Total Power dissipated in IC is T J = T A + R q ? P D .
4. The pins which are not defined may not be loaded by external signals.
5. 35 m m copper, 10 cm 2 copper area.
http://onsemi.com
3
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