参数资料
| 型号： | NCV7356D1R2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 20/24页 |
| 文件大小： | 0K |
| 描述： | IC TXRX CAN SGL WIRE 8-SOIC |
| 标准包装： | 1 |
| 类型： | 收发器 |
| 驱动器/接收器数： | 1/1 |
| 规程： | CAN |
| 电源电压： | 5 V ~ 27 V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | NCV7356D1R2GOSDKR |
NCV7356
http://onsemi.com
5
Electrical Specification
All voltages are referenced to ground (GND). Positive
currents flow into the IC. The maximum ratings given in
the table below are limiting values that do not lead to a
permanent damage of the device but exceeding any of these
limits may do so. Long term exposure to limiting values
may affect the reliability of the device.
MAXIMUM RATINGS
Rating
Symbol
Condition
Min
Max
Unit
Supply Voltage, Normal Operation
VBAT
0.3
18
V
ShortTerm Supply Voltage, Transient
VBAT.LD
Load Dump; t < 500 ms
40
V (peak)
Jump Start; t < 1.0 min
27
V
Transient Supply Voltage
VBAT.TR1
ISO 7637/1 Pulse 1 (Note 2)
50
V
Transient Supply Voltage
VBAT.TR2
ISO 7637/1 Pulses 2 (Note 2)
100
V
Transient Supply Voltage
VBAT.TR3
ISO 7637/1 Pulses 3A, 3B
200
V
CANH Voltage
VCANH
VBAT < 27 V
20
40
V
VBAT = 0 V
40
Transient Bus Voltage
VCANHTR1
ISO 7637/1 Pulse 1 (Note 3)
50
V
Transient Bus Voltage
VCANHTR2
ISO 7637/1 Pulses 2 (Note 3)
100
V
Transient Bus Voltage
VCANHTR3
ISO 7637/1 Pulses 3A, 3B (Note 3)
200
V
DC Voltage on Pin LOAD
VLOAD
Via RT > 2.0 kW
40
V
DC Voltage on Pins TxD, MODE1, MODE0, RxD
VDC
0.3
7.0
V
ESD Capability of CANH
VESDBUS
Human Body Model
(with respect to VBAT and GND)
Eq. to Discharge 100 pF with 1.5 kW
4000
V
ESD Capability of Any Other Pin
VESD
Human Body Model
Eq. to Discharge 100 pF with 1.5 kW
2000
V
Maximum Latchup Free Current at Any Pin
ILATCH
500
mA
Storage Temperature
TSTG
55
150
°C
Junction Temperature
TJ
40
150
°C
Lead Temperature Soldering
Reflow: (SMD styles only)
SOIC14
Tsld
60 s 150 s above 183°C
240 peak
°C
SOIC8
60 s 150 s above 217°C
260 peak
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. ISO 7637 test pulses are applied to VBAT via a reverse polarity diode and >1.0 mF blocking capacitor.
3. ISO 7637 test pulses are applied to CANH via a coupling capacitance of 1.0 nF.
4. ESD measured per Q100002 (EIA/JESD22A114A).
TYPICAL THERMAL CHARACTERISTICS
Parameter
Test Condition, Typical Value
Unit
Min Pad Board
1, Pad Board
SOIC8
JunctiontoLead (psiJL7, YJL8) or Pins 67
57 (Note 5)
51 (Note 6)
°C/W
JunctiontoAmbient (RqJA, qJA)
187 (Note 5)
128 (Note 6)
°C/W
SOIC14
JunctiontoLead (psiJL8, YJL8)
30 (Note 7)
30 (Note 8)
°C/W
JunctiontoAmbient (RqJA, qJA)
122 (Note 7)
84 (Note 8)
°C/W
5. 1 oz copper, 53 mm2 coper area, 0.062″ thick FR4.
6. 1 oz copper, 716 mm2 coper area, 0.062″ thick FR4.
7. 1 oz copper, 94 mm2 coper area, 0.062″ thick FR4.
8. 1 oz copper, 767 mm2 coper area, 0.062″ thick FR4.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV7356D2 | 功能描述:网络控制器与处理器 IC Single Wire CAN RoHS:否 制造商:Micrel 产品:Controller Area Network (CAN) 收发器数量: 数据速率: 电源电流（最大值）:595 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:PBGA-400 封装:Tray |
| NCV7356D2G | 功能描述:网络控制器与处理器 IC SINGLE WIRE CAN RoHS:否 制造商:Micrel 产品:Controller Area Network (CAN) 收发器数量: 数据速率: 电源电流（最大值）:595 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:PBGA-400 封装:Tray |
| NCV7356D2R2 | 功能描述:网络控制器与处理器 IC Single Wire CAN RoHS:否 制造商:Micrel 产品:Controller Area Network (CAN) 收发器数量: 数据速率: 电源电流（最大值）:595 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:PBGA-400 封装:Tray |
| NCV7356D2R2G | 功能描述:网络控制器与处理器 IC SINGLE WIRE CAN RoHS:否 制造商:Micrel 产品:Controller Area Network (CAN) 收发器数量: 数据速率: 电源电流（最大值）:595 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:PBGA-400 封装:Tray |
| NCV7356DR2 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Single Wire CAN Transceiver |
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