参数资料
| 型号： | NCV7356D1R2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 21/24页 |
| 文件大小： | 0K |
| 描述： | IC TXRX CAN SGL WIRE 8-SOIC |
| 标准包装： | 1 |
| 类型： | 收发器 |
| 驱动器/接收器数： | 1/1 |
| 规程： | CAN |
| 电源电压： | 5 V ~ 27 V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | NCV7356D1R2GOSDKR |
NCV7356
http://onsemi.com
6
ELECTRICAL CHARACTERISTICS (VBAT = 5.0 to 27 V, TA = 40 to +125°C, unless otherwise specified.)
Characteristic
Symbol
Condition
Min
Typ
Max
Unit
GENERAL
Undervoltage Lock Out
VBATuv
3.5
4.8
V
Supply Current, Recessive,
All Active Modes
IBATN
VBAT = 18 V,
TxD Open
Not High Speed Mode
5.0
6.0
mA
High Speed Mode
8.0
Normal Mode Supply Current,
Dominant
IBATN
(Note 10)
VBAT = 27 V, MODE0 = MODE1 = H,
TxD = L, Rload = 200 W
30
35
mA
HighSpeed Mode Supply Current,
Dominant
IBATN
(Note 10)
VBAT = 16 V, MODE0 = H, MODE1 = L,
TxD = L, Rload = 75 W
70
75
mA
WakeUp Mode Supply Current,
Dominant
IBATW
(Note 10)
VBAT = 27 V,
MODE0 = L, MODE1 = H,
TxD = L, Rload = 200 W
60
75
mA
Sleep Mode Supply Current (Note 9)
IBATS
VBAT = 13 V, TA = 85°C,
TxD, RxD, MODE0,
MODE1 Open
30
60
mA
Thermal Shutdown (Note 10)
TSD
155
180
°C
Thermal Recovery (Note 10)
TREC
126
150
°C
CANH
Bus Output Voltage
Voh
RL > 200 W, Normal Mode
6.0 V < VBAT < 27 V
4.4
5.1
V
Bus Output Voltage
Low Battery
Voh
RL > 200 W, Normal HighSpeed Mode
5.0 V < VBAT < 6.0 V
3.4
5.1
V
Bus Output Voltage
HighSpeed Mode
Voh
RL > 75 W, HighSpeed Mode
8.0 V < VBAT < 16 V
4.2
5.1
V
HV Fixed WakeUp
Output High Voltage
VohWuFix
WakeUp Mode, RL > 200 W,
11.4 V < VBAT < 27 V
9.9
12.5
V
HV Offset WakeUp
Output High Voltage
VohWuOffset
WakeUp Mode, RL > 200 W,
5.0 V < VBAT < 11.4 V
VBAT –1.5
VBAT
V
Recessive State
Output Voltage
Vol
Recessive State or Sleep Mode,
Rload = 6.5 kW
0.20
0.20
V
Bus Short Circuit Current
ICAN_SHORT
VCANH = 0 V, VBAT = 27 V, TxD = 0 V
50
350
mA
Bus Leakage Current
During Loss of Ground
ILKN_CAN
(Note 11)
Loss of Ground, VCANH = 0 V
50
10
mA
Bus Leakage Current, Bus Positive
ILKP_CAN
TxD High
10
10
mA
Bus Input Threshold
Vih
Normal, HighSpeed Mode, HVWU
6.0 v VBAT v 27 V
2.0
2.1
2.2
V
Bus Input Threshold Low Battery
Vihlb
Normal, VBAT = 5.0 V to 6.0 V
1.6
1.7
2.2
V
Fixed WakeUp from Sleep
Input High Voltage Threshold
VihWuFix
(Note 10)
Sleep Mode, VBAT > 10.9 V
6.6
7.9
V
Offset WakeUp from Sleep
Input High Voltage Threshold
VihWuOffset
(Note 10)
Sleep Mode
VBAT 4.3
VBAT 3.25
V
LOAD
Voltage on Switched Ground Pin
VLOAD_1mA
ILOAD = 1.0 mA
0.1
V
Voltage on Switched Ground Pin
VLOAD
ILOAD = 5.0 mA
0.5
V
Voltage on Switched Ground Pin
VLOAD_LOB
ILOAD = 7.0 mA, VBAT = 0 V
1.0
V
Load Resistance During Loss of
Battery
RLOAD_LOB
VBAT = 0
RLOAD
10%
RLOAD
+35%
W
9. Characterization data supports IBATS < 65 mA with conditions VBAT = 18 V, TA = 125°C
10.Thresholds not tested in production, guaranteed by design.
11. Leakage current in case of loss of ground is the summary of both currents ILKN_CAN and ILKN_LOAD.
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