参数资料
型号: NCV7702BDWG
厂商: ON Semiconductor
文件页数: 3/9页
文件大小: 0K
描述: IC DRIVER H-BRDG DUAL 1A 24-SOIC
标准包装: 30
类型: 半桥
输入类型: 非反相
输出数: 4
电流 - 峰值输出: 900mA
电源电压: 7 V ~ 16 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 24-SOIC(0.295",7.50mm 宽)
供应商设备封装: 24-SOIC
包装: 管件
其它名称: Q2618176
Q2915317
NCV7702B
ELECTRICAL CHARACTERISTICS (7.0 V v VB v 16 V, -40 ° C v T J v 125 ° C; unless otherwise specified.) Notes 2 and 3.
Characteristic
Test Conditions
Min
Typ
Max
Unit
General Characteristics
Quiescent Current
Standby Mode, VB ≤ 12.8 V
Run Mode, I OUT = 750 mA, Both Channels
-
-
1.0
-
10
40
m A
mA
Logic Inputs
High Level Input Voltage, V IH
Low Level Input Voltage, V IL
IN X Input Current
EN X Input Current
EN X Delay, t PE
-
-
V IN = 5.0 V
V IN = 0 V
V IN = 5.0 V
V IN = 0 V
50% of EN X to 50% of OUT X ; Note 4 Turn ON
Turn Off
2.0
-
-
-5.0
-
-5.0
-
-
-
-
0
0
130
0
-
-
-
0.8
5.0
-
200
5.0
25
60
V
V
m A
m A
m A
m A
m s
Status Outputs
Saturation Voltage, V SL
Leakage Current
I STATUS = 4.0 mA
V STATUS = 5.0 V
-
-
-
-
0.4
10
V
m A
Half-Bridge Driver Outputs
Total Output Saturation Voltage
Output Saturation Voltage High
Output Saturation Voltage Low
Output Leakage
Overcurrent Threshold, I OC
Overcurrent Duty Cycle
I OUT = 750 mA, Each Channel
I OUT = 750 mA, VB - V OUT , Each Driver
I OUT = 750 mA, V OUT - V PGND , Each Driver
V OUT = VB
V OUT = V PGND
Low Side, Each Channel
High Side, Each Channel
470 pF ≤ C T ≤ 1500 pF; Note 5
-
-
-
-
-5.0
0.9
0.775
3.0
2.5
1.25
1.25
0
0
1.25
0.900
4.0
3.0
1.6
1.6
5.0
-
1.6
1.10
6.0
V
V
V
m A
m A
A
%
Switching Delay, t PI
m s
Sink to Source
Source to Sink
50% of IN X to 60% of OUT X ; Note 6
50% of IN X to 40% of OUT X ; Note 6
0.20
0.20
-
-
14
10
Dead Band Time, t DB
Recirculation Diode Forward Voltage
Note 6
I DIODE = 750 mA
0.10
-
-
-
10
2.5
m s
V
Delay Timer
Charge Current, I CHG
Discharge Current, I DCH
Input Threshold High, V CH
Input Threshold Low, V DC
-
-
-
-
-85
1.25
1.85
200
-65
2.0
2.0
300
-45
3.25
2.15
400
m A
m A
V
mV
Global Fault Protection
Overtemperature Detection Threshold
Overtemperature Hysteresis
Overvoltage Detection Threshold
Overvoltage Hysteresis
Note 7
Note 7
Note 8
-
150
-
26
500
-
15
28
850
210
-
30
1200
° C
° C
V
mV
2. Designed to meet these characteristics over the stated voltage and temperature recommended operating ranges, though may not be 100%
parametrically tested in production.
3. Operation is guaranteed down to VB = 6.0 V. Electrical characteristics may be outside the limits at that voltage.
4. See Figures 2 and 3; VB = 14 V, R = 100 W .
5. C T must remain in this range to guarantee proper operation, and to ensure part integrity, during hard short conditions.
6. See Figures 2 and 4; VB = 14 V, R = 100 W .
7. Guaranteed by design.
8. Consult factory for no overvoltage detection or lower overvoltage detection threshold options.
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