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参数资料
| 型号： | NCV8401ADTRKG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | IC DVR LOW SIDE TEMP/CURR DPAK-4 |
| 标准包装： | 2,500 |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 23 毫欧 |
| 电流 - 输出 / 通道： | 35A |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | * |
| 封装/外壳： | * |
| 供应商设备封装： | * |
| 包装： | * |
NCV8401, NCV8401A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Drain ? to ? Source Voltage Internally Clamped
Drain ? to ? Gate Voltage Internally Clamped
(R GS = 1.0 M W )
Gate ? to ? Source Voltage
Rating
Symbol
V DSS
V DGR
V GS
Value
42
42
" 14
Unit
V
V
V
Drain Current ? Continuous
I D
Internally Limited
Total Power Dissipation
@ T A = 25 ° C (Note 1)
@ T A = 25 ° C (Note 2)
P D
1.1
2.0
W
Thermal Resistance,
Junction ? to ? Case
Junction ? to ? Ambient (Note 1)
Junction ? to ? Ambient (Note 2)
R q JC
R q JA
R q JA
1.6
110
60
° C/W
Single Pulse Drain ? to ? Source Avalanche Energy
(V DD = 25 Vdc, V GS = 5.0 Vdc, I L = 3.65 Apk, L = 120 mH, R G = 25 W , T Jstart = 150 ° C) (Note 3)
Load Dump Voltage (V GS = 0 and 10 V, R I = 2.0 W , R L = 3.0 W , t d = 400 ms)
Operating Junction Temperature
Storage Temperature
E AS
V LD
T J
T stg
800
65
? 40 to 150
? 55 to 150
mJ
V
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Minimum FR4 PCB, steady state.
2. Mounted onto a 2 ″ square FR4 board
(1 ″ square, 2 oz. Cu 0.06 ″ thick single ? sided, t = steady state).
3. Not subject to production testing.
+
I D
DRAIN
I G
+
VGS
?
GATE
SOURCE
VDS
?
Figure 1. Voltage and Current Convention
http://onsemi.com
2
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