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参数资料
| 型号： | NCV8401ADTRKG |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | IC DVR LOW SIDE TEMP/CURR DPAK-4 |
| 标准包装： | 2,500 |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 23 毫欧 |
| 电流 - 输出 / 通道： | 35A |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | * |
| 封装/外壳： | * |
| 供应商设备封装： | * |
| 包装： | * |
NCV8401, NCV8401A
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwis e noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Clamped Breakdown Voltage
(V GS = 0 Vdc, I D = 250 m Adc)
(V GS = 0 Vdc, I D = 250 m Adc, T J = 150 ° C) (Note 4)
Zero Gate Voltage Drain Current
(V DS = 32 Vdc, V GS = 0 Vdc)
(V DS = 32 Vdc, V GS = 0 Vdc, T J = 150 ° C) (Note 4)
Gate Input Current
(V GS = 5.0 Vdc, V DS = 0 Vdc)
V (BR)DSS
I DSS
I GSSF
42
42
46
44
1.5
6.5
50
50
50
5.0
100
Vdc
m Adc
m Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V DS = V GS , I D = 1.2 mAdc)
Threshold Temperature Coefficient
Static Drain ? to ? Source On ? Resistance (Note 5)
(V GS = 10 Vdc, I D = 5.0 Adc, T J @ 25 ° C)
(V GS = 10 Vdc, I D = 5.0 Adc, T J @ 150 ° C) (Note 4)
Static Drain ? to ? Source On ? Resistance (Note 5)
(V GS = 5.0 Vdc, I D = 5.0 Adc, T J @ 25 ° C)
(V GS = 5.0 Vdc, I D = 5.0 Adc, T J @ 150 ° C) (Note 4)
Source ? Drain Forward On Voltage
(I S = 5 A, V GS = 0 V)
V GS(th)
R DS(on)
R DS(on)
V SD
1.0
1.8
5.0
23
43
28
50
0.80
2.0
29
55
34
60
1.1
Vdc
? mV/ ° C
m W
m W
V
SWITCHING CHARACTERISTICS (Note 4)
Turn ? ON Time (10% V IN to 90% I D )
Turn ? OFF Time (90% V IN to 10% I D )
Turn ? ON Time (10% V IN to 90% I D )
Turn ? OFF Time (90% V IN to 10% I D )
Slew ? Rate ON (80% V DS to 50% V DS )
Slew ? Rate OFF (50% V DS to 80% V DS )
V IN = 0 V to 5 V, V DD = 25 V
I D = 1.0 A, Ext R G = 2.5 W
V IN = 0 V to 10 V, V DD = 25 V ,
I D = 1.0 A, Ext R G = 2.5 W
V in = 0 to 10 V, V DD = 12 V,
R L = 4.7 W
t ON
t OFF
t ON
t OFF
? dV DS /dt ON
dV DS /dt OFF
41
129
16
164
1.27
0.36
50
150
25
180
2.0
0.75
m s
V /m s
SELF PROTECTION CHARACTERISTIC S (T J = 25 ° C unless otherwise noted)
Current Limit
V GS = 5.0 V, V DS = 10 V
V GS = 5.0 V, T J = 150 ° C (Note 4)
I LIM
25
11
30
16
35
21
Adc
V GS = 10 V, V DS = 10 V
V GS = 10 V, T J = 150 ° C (Note 4)
30
18
35
25
40
28
Temperature Limit (Turn ? off)
Thermal Hysteresis
Temperature Limit (Turn ? off)
Thermal Hysteresis
V GS = 5.0 V (Note 4)
V GS = 5.0 V
V GS = 10 V (Note 4)
V GS = 10 V
T LIM(off)
D T LIM(on)
T LIM(off)
D T LIM(on)
150
150
175
15
165
15
200
185
° C
° C
° C
° C
GATE INPUT CHARACTERISTICS (Note 4)
Device ON Gate Input Current
V GS = 5 V I D = 1.0 A
I GON
50
100
m A
V GS = 10 V I D = 1.0 A
400
700
Current Limit Gate Input Current
V GS = 5 V, V DS = 10 V
I GCL
0.1
0.5
mA
V GS = 10 V, V DS = 10 V
0.7
1.0
Thermal Limit Fault Gate Input Current
V GS = 5 V, V DS = 10 V
I GTL
0.6
1.0
mA
V GS = 10 V, V DS = 10 V
ESD ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted) (Note 4)
2.0
4.0
Electro ? Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
ESD
4000
400
V
4. Not subject to production testing.
5. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
http://onsemi.com
3
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