参数资料
| 型号： | NCV8406ASTT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | IC DVR LOW SIDE SOT-223-4 |
| 标准包装： | 4,000 |
| 系列： | * |
NCV8406, NCV8406A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Drain ? to ? Source Voltage Internally Clamped
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
70
" 14
Unit
Vdc
Vdc
Drain Current
Continuous
I D
Internally Limited
Total Power Dissipation ? SOT ? 223 Version
@ T A = 25 ° C (Note 1)
@ T A = 25 ° C (Note 2)
Total Power Dissipation ? DPAK Version
@ T A = 25 ° C (Note 1)
@ T A = 25 ° C (Note 2)
Thermal Resistance ? SOT ? 223 Version
Junction ? to ? Case
Junction ? to ? Ambient (Note 1)
Junction ? to ? Ambient (Note 2)
Thermal Resistance ? DPAK Version
Junction ? to ? Case
Junction ? to ? Ambient (Note 1)
Junction ? to ? Ambient (Note 2)
Single Pulse Inductive Load Switching Energy
(Starting T J = 25 ° C, V DD = 50 Vdc, V GS = 5.0 Vdc,
I L = 2.1 Apk, L = 50 mH, R G = 25 W )
Load Dump Voltage (V GS = 0 and 10 V, R I = 2 W , R L = 7 W , t d = 400 ms)
Operating Junction Temperature Range
Storage Temperature Range
P D
P D
R q JC
R q JA
R q JA
R q JC
R q JA
R q JA
E AS
V LD
T J
T stg
1.25
1.81
1.31
2.31
7.0
100
69
1.0
95
54
110
75
? 40 to 150
? 55 to 150
W
W
° C/W
° C/W
mJ
V
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface mounted onto minimum pad size (100 sq/mm) FR4 PCB, 1 oz cu.
2. Mounted onto 1 ″ square pad size (700 sq/mm) FR4 PCB, 1 oz cu.
+
I D
DRAIN
I G
+
VGS
?
GATE
SOURCE
VDS
?
Figure 1. Voltage and Current Convention
http://onsemi.com
2
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PDF描述 |
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相关代理商/技术参数 |
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|---|---|
| NCV8406DTRKG | 功能描述:MOSFET 65V6A SINGLE N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8406STT3G | 功能描述:功率驱动器IC 65 V,6 A SINGLE N-CH RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCV8408-D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Self-Protected Low Side Driver with Temperature and Current Limit |
| NCV8408DTRKG | 功能描述:MOSFET 42V 8A FULLY PROTECTED LO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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