参数资料
| 型号： | NCV8406ASTT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/12页 |
| 文件大小： | 0K |
| 描述： | IC DVR LOW SIDE SOT-223-4 |
| 标准包装： | 4,000 |
| 系列： | * |
NCV8406, NCV8406A
TYPICAL PERFORMANCE CURVES
1.2
1100
1.1
1.0
I D = 150 m A
V DS = V GS
1000
900
? 40 ° C
25 ° C
0.9
800
0.8
0.7
700
600
100 ° C
150 ° C
0.6
? 40 ? 20
0
20
40
60
80
100
120 140
500
1
2
3
4
5
6
7
V GS = 0 V
8 9
10
T ( ° C)
Figure 14. Normalized Threshold Voltage vs.
Temperature
I S (A)
Figure 15. Source ? Drain Diode Forward
Characteristics
1600
1400
1200
1000
V DD = 13.8 V
I D = 2 A
R G = 0 W
t d(off)
3400
3000
2600
2200
t d(off) , V GS = 10 V
t r , V GS = 5 V
t d(off) , V GS = 5 V
800
600
400
200
0
3
4
5
6
7
8
9
t f
t r
t d(on)
10
1800
1400
1000
600
200
? 200
0
500
1000
t f , V GS = 10 V
t f , V GS = 5 V
t r , V GS = 10 V
t d(on) , V GS = 5 V
t d(on) , V GS = 10 V
1500 2000
V GS (V)
Figure 16. Resistive Load Switching Time vs.
Gate ? Source Voltage
35
30
R G ( W )
Figure 17. Resistive Load Switching Time vs.
Gate Resistance
25
20
15
10
dV DS /d t(off) , V GS = 5 V
dV DS /d t(off) , V GS = 10 V
5
0
500
1000
1500
2000
R G ( W )
Figure 18. Drain ? Source Voltage Slope during
Turn On and Turn Off vs. Gate Resistance
http://onsemi.com
6
相关PDF资料 |
PDF描述 |
|---|---|
| NCV8450ASTT3G | IC DVR HIGH SIDE SOT-223-4 |
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| NCV8502PDWADJR2 | IC REG LDO ADJ .15A 16-SOIC |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV8406DTRKG | 功能描述:MOSFET 65V6A SINGLE N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8406STT3G | 功能描述:功率驱动器IC 65 V,6 A SINGLE N-CH RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCV8408-D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Self-Protected Low Side Driver with Temperature and Current Limit |
| NCV8408DTRKG | 功能描述:MOSFET 42V 8A FULLY PROTECTED LO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8440 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection |
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