参数资料
| 型号： | NCV8406ASTT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/12页 |
| 文件大小： | 0K |
| 描述： | IC DVR LOW SIDE SOT-223-4 |
| 标准包装： | 4,000 |
| 系列： | * |
NCV8406, NCV8406A
TYPICAL PERFORMANCE CURVES
10
T Jstart = 25 ° C
T Jstart = 150 ° C
1000
100
T Jstart = 25 ° C
T Jstart = 150 ° C
1
10
100
10
10
100
10
1
L (mH)
Figure 2. Single Pulse Maximum Switch ? off
Current vs. Load Inductance
T Jstart = 25 ° C
T Jstart = 150 ° C
1000
100
L (mH)
Figure 3. Single ? Pulse Maximum Switching
Energy vs. Load Inductance
T Jstart = 25 ° C
T Jstart = 150 ° C
0.1
1
10
10
1
10
TIME IN CLAMP (ms)
Figure 4. Single Pulse Maximum Inductive
Switch ? off Current vs. Time in Clamp
TIME IN CLAMP (ms)
Figure 5. Single ? Pulse Maximum Inductive
Switching Energy vs. Time in Clamp
12
10
6V
7V
8V
9V
10 V
12
9
V DS = 10 V
? 40 ° C
25 ° C
8
5V
100 ° C
6
4
T a = 25 ° C
4V
3.3 V
3V
6
3
150 ° C
2
V GS = 2.5 V
0
0
5
10
15
0
0
1
2
3
4
5
V DS (V)
Figure 6. On ? state Output Characteristics
http://onsemi.com
4
V GS (V)
Figure 7. Transfer Characteristics
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV8406DTRKG | 功能描述:MOSFET 65V6A SINGLE N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8406STT3G | 功能描述:功率驱动器IC 65 V,6 A SINGLE N-CH RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCV8408-D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Self-Protected Low Side Driver with Temperature and Current Limit |
| NCV8408DTRKG | 功能描述:MOSFET 42V 8A FULLY PROTECTED LO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8440 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection |
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