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| 型号： | NDB6030PL |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 30A D2PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 30A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 19A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 36nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1570pF @ 15V |
| 功率 - 最大： | 75W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263（D2Pak） |
| 包装： | 标准包装 |
| 其它名称： | NDB6030PLFSDKR |
Electrical Characteristics (T C = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
I D = -250 μA, Referenced to 25 C
BV DSS
? BV DSS / ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V GS = 0 V, I D = -250 μA
V DS = -24 V, V GS = 0 V
V GS = 16 V, V DS = 0 V
V GS = -16 V, V DS = 0 V
o
T J = 125°C
-30
-36
-250
1
-100
-100
V
mV/ o C
μA
mA
nA
nA
ON CHARACTERISTICS
(Note)
? V GS(th) / ? T J
Gate Threshold Voltage Temp.Coefficient
I D = -250 μA, Referenced to 25 o C
2.2
mV/ o C
V GS(th)
Gate Threshold Voltage
V DS = V GS , I D = -250 μA
-1
-1.4
-2
V
T J = 125°C
-0.8
-1.08
-1.6
R DS(ON)
Static Drain-Source On-Resistance
V GS = -4.5 V, I D = -15 A
0.037
0.042
?
V GS = -10 V, I D = -19 A
T J = 125°C
0.053
0.021
0.075
0.025
I D(on)
g FS
On-State Drain Current
Forward Transconductance
V GS = -4.5 V, V DS = -5 V
V DS = -4.5 V, I D = -19 A
-20
20
A
S
DYNAMIC CHARACTERISTICS
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = -15 V, V GS = 0 V,
f = 1.0 MHz
1570
975
360
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note)
t D(on)
t r
t D(off)
t f
Q g
Q gs
Q gd
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = -15 V, I D = -5 A,
V GS = -5 V, R GEN = 6 ?
V DS = -12 V
I D = -30 A , V GS = -5 V
12.5
60
50
52
26
6.5
11.5
25
120
100
100
36
nS
nS
nS
nS
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I S
I SM
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
-30
-100
A
A
V SD
t rr
I rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Current
V GS = 0 V, I S = -15 A
V GS = 0 V, I F = -30 A
dI F /dt = 100 A/μs
(Note)
-0.92
58
-1.5
-1.3
V
ns
A
Note:
Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%.
NDP6030PL Rev.B1
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