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| 型号： | NDF04N62ZG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 620V 2OHM TO220FP |
| 产品目录绘图： | MOSFET TO-220, TO-220AB |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 620V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2 欧姆 @ 2A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 50µA |
| 闸电荷(Qg) @ Vgs： | 19nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 535pF @ 25V |
| 功率 - 最大： | 28W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220FP |
| 包装： | 管件 |
| 其它名称： | NDF04N62ZG-ND NDF04N62ZGOS |
NDF04N62Z, NDD04N62Z
N-Channel Power MOSFET
620 V, 2.0 W
Features
? Low ON Resistance
? Low Gate Charge
? ESD Diode ? Protected Gate
? 100% Avalanche Tested
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS ( T C = 25 ° C unless otherwise noted)
V DSS
620 V
http://onsemi.com
R DS(ON) (MAX) @ 2 A
2.0 W
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
NDF
620
NDD
Unit
V
N ? Channel
D (2)
Continuous Drain Current R q JC
I D
4.4
(Note 2)
4.1
A
Continuous Drain Current R q JC , T A =
100 ° C
Pulsed Drain Current,
V GS @ 10V
Power Dissipation R q JC (Note 1)
Gate ? to ? Source Voltage
Single Pulse Avalanche Energy,
I D = 4.0 A
ESD (HBM) (JESD22 ? A114)
I D
I DM
P D
V GS
E AS
V esd
2.8
(Note 2)
18
(Note 2)
28
± 30
120
3000
2.6
16
83
A
A
W
V
mJ
V
G (1)
4
S (3)
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%, T A =
25 ° C) (Figure 14)
V ISO
4500
?
V
1
2
3
3
4
Peak Diode Recovery
Continuous Source Current
(Body Diode)
Maximum Temperature for Soldering
Leads, 0.063 ″
(1.6 mm) from Case for 10 s
Package Body for 10 s
dv/dt
I S
T L
T PKG
4.5 (Note 3)
4.0
300
260
V/ns
A
° C
1
2
NDF04N62ZG
TO ? 220FP
CASE 221D
NDD04N62Z ? 1G
IPAK
CASE 369D
1 2
3
NDD04N62ZT4G
DPAK
CASE 369AA
Operating Junction and T J , T stg ? 55 to 150 ° C
Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 ″ sq. pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Limited by maximum junction temperature
3. I SD = 4.0 A, di/dt ≤ 100 A/ m s, V DD ≤ BV DSS , T J = +150 ° C
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
September, 2011 ? Rev. 2
1
Publication Order Number:
NDF04N62Z/D
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