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| 型号： | NDF06N60ZH |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N CH 600V 7.1A TO220FP |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | * |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 100µA |
| 闸电荷(Qg) @ Vgs： | 47nC @ 10V |
| 输入电容 (Ciss) @ Vds： | * |
| 功率 - 最大： | 35W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220FP |
| 包装： | 管件 |
NDF06N60Z
N-Channel Power MOSFET
600 V, 1.2 W
Features
? Low ON Resistance
? Low Gate Charge
? ESD Diode ? Protected Gate
? 100% Avalanche Tested
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
http://onsemi.com
V DSS (@ T Jmax ) R DS(ON) (MAX) @ 3 A
650 V 1.2 Ω
Rating
Drain ? to ? Source Voltage
Continuous Drain Current, R q JC (Note 1)
Continuous Drain Current
T A = 100 ° C, R q JC (Note 1)
Pulsed Drain Current,
V GS @ 10 V
Power Dissipation, R q JC
Gate ? to ? Source Voltage
Single Pulse Avalanche Energy, L = 6.3 mH,
I D = 6.0 A
ESD (HBM) (JESD22 ? A114)
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T A = 25 ° C) (Figure 13)
Peak Diode Recovery (Note 2)
Continuous Source Current (Body Diode)
Symbol
V DSS
I D
I D
I DM
P D
V GS
E AS
V esd
V ISO
dv/dt
I S
Value
600
7.1
4.5
28
35
± 30
113
3000
4500
4.5
6.0
Unit
V
A
A
A
W
V
mJ
V
V
V/ns
A
G (1)
N ? Channel
D (2)
S (3)
3
Maximum Temperature for Soldering Leads T L 260 ° C
Operating Junction and T J , T stg ? 55 to ° C
Storage Temperature Range 150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. I SD = 6.0 A, di/dt ≤ 100 A/ m s, V DD ≤ BV DSS , T J = +150 ° C
1 1
2 2
3
NDF06N60ZG NDF06N60ZH
TO ? 220FP TO ? 220FP
CASE 221D CASE 221AH
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
February, 2013 ? Rev. 6
1
Publication Order Number:
NDF06N60Z/D
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相关代理商/技术参数 |
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|---|---|
| NDF06N62Z | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 620 V, 0.98 , |
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| NDF08N50Z | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 500 V, 0.69 |
| NDF08N50ZG | 功能描述:MOSFET NFET T0220FP 600V 7.5A 85 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDF08N50ZH | 功能描述:MOSFET NFET 500V 7.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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