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参数资料
| 型号： | NDF08N60ZG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 7.5A TO220FP |
| 产品目录绘图： | MOSFET TO-220, TO-220AB |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 950 毫欧 @ 3.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 100µA |
| 闸电荷(Qg) @ Vgs： | 39nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1140pF @ 25V |
| 功率 - 最大： | 35W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220FP |
| 包装： | 管件 |
| 其它名称： | NDF08N60ZG-ND NDF08N60ZGOS |
NDF08N60Z
N-Channel Power MOSFET
600 V, 0.95 W
Features
? Low ON Resistance
? Low Gate Charge
? ESD Diode ? Protected Gate
? 100% Avalanche Tested
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
V DSS
600 V
http://onsemi.com
R DS(ON) (MAX) @ 3.5 A
0.95 W
Rating
Drain ? to ? Source Voltage
Continuous Drain Current R q JC (Note 1)
Continuous Drain Current R q JC
T A = 100 ° C (Note 1)
Pulsed Drain Current,
V GS @ 10 V
Symbol
V DSS
I D
I D
I DM
NDF08N60Z
600
8.4
5.3
30
Unit
V
A
A
A
G (1)
N ? Channel
D (2)
Power Dissipation
Gate ? to ? Source Voltage
Single Pulse Avalanche Energy,
I D = 7.5 A
P D
V GS
E AS
36
± 30
235
W
V
mJ
NDF08N60ZG
TO ? 220FP
CASE 221D
MARKING
DIAGRAM
S (3)
ESD (HBM)
(JESD 22 ? A114)
V esd
4000
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T A = 25 ° C) (Figure 14)
Peak Diode Recovery (Note 2)
Continuous Source Current (Body Diode)
V ISO
dv/dt
I S
4500
4.5
7.5
V
V/ns
A
NDF08N60ZG
or
NDF08N60ZH
AYWW
Maximum Temperature for Soldering
Leads
T L
260
° C
NDF08N60ZH
TO ? 220FP
Gate
Source
Operating Junction and T J , T stg ? 55 to 150 ° C
Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
CASE 221AH
A = Location Code
Y = Year
WW = Work Week
Drain
1. Limited by maximum junction temperature
2. I D v 7.5 A, di/dt ≤ 200 A/ m s, V DD ≤ BV DSS , T J ≤ 150 ° C.
G, H
= Pb ? Free, Halogen ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
July, 2013 ? Rev. 3
1
Publication Order Number:
NDF08N60Z/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NDF08N60ZH | 功能描述:MOSFET NFET 600V 7.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDF10N60Z | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 0.65 ?, 600 Volts |
| NDF10N60ZG | 功能描述:MOSFET NFET T0220FP 600V 10A .65 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDF10N60ZH | 功能描述:MOSFET NFET 600V 10A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDF10N62Z | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 620 V, 0.65 ? |
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