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| 型号： | NDF08N60ZG |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 7.5A TO220FP |
| 产品目录绘图： | MOSFET TO-220, TO-220AB |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 950 毫欧 @ 3.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 100µA |
| 闸电荷(Qg) @ Vgs： | 39nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1140pF @ 25V |
| 功率 - 最大： | 35W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220FP |
| 包装： | 管件 |
| 其它名称： | NDF08N60ZG-ND NDF08N60ZGOS |
NDF08N60Z
PACKAGE DIMENSIONS
TO ? 220 FULLPAK
CASE 221D ? 03
ISSUE K
F
? B ?
C
? T ?
S
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
A
Q
U
DIM
A
INCHES
MIN MAX
0.617 0.635
MILLIMETERS
MIN MAX
15.67 16.12
B
0.392 0.419
9.96 10.63
1 2 3
C
0.177 0.193
4.50 4.90
K
H
? Y ?
D
F
G
H
0.024 0.039
0.116 0.129
0.100 BSC
0.118 0.135
0.60 1.00
2.95 3.28
2.54 BSC
3.00 3.43
J
K
0.018 0.025
0.503 0.541
0.45 0.63
12.78 13.73
G
N
L
D
3 PL
0.25 (0.010)
M
B
M
Y
J
R
L
N
Q
R
S
U
0.048 0.058
0.200 BSC
0.122 0.138
0.099 0.117
0.092 0.113
0.239 0.271
1.23 1.47
5.08 BSC
3.10 3.50
2.51 2.96
2.34 2.87
6.06 6.88
TO ? 220 FULLPACK, 3 ? LEAD
CASE 221AH
ISSUE D
NOTES:
E/2
E
A
P
0.14
M
B A
M
H1
A
B
A1
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH
AND GATE PROTRUSIONS. MOLD FLASH AND GATE
PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE TO BE MEASURED AT OUTERMOST
Q
1 2 3
D
C
NOTE 3
EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR
PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION
SHALL NOT EXCEED 2.00.
MILLIMETERS
DIM
MIN MAX
L
L1
A
A1
A2
4.30 4.70
2.50 2.90
2.50 2.70
3X
b2
e
3X
b
0.25
M
B A
M
C
c
A2
b
b2
c
D
E
e
0.54 0.84
1.10 1.40
0.49 0.79
14.70 15.30
9.70 10.30
2.54 BSC
H1
L
L1
P
Q
6.70 7.10
12.70 14.73
--- 2.10
3.00 3.40
2.80 3.20
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NDF08N60Z/D
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| NDF08N60ZH | 功能描述:MOSFET NFET 600V 7.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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