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参数资料
| 型号： | NDF10N62ZG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 620V .75OHM TO220FP |
| 产品目录绘图： | MOSFET TO-220, TO-220AB |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 620V |
| 电流 - 连续漏极(Id) @ 25° C： | 10A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 750 毫欧 @ 5A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 100µA |
| 闸电荷(Qg) @ Vgs： | 47nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1425pF @ 25V |
| 功率 - 最大： | 36W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220FP |
| 包装： | 管件 |
| 其它名称： | NDF10N62ZG-ND NDF10N62ZGOS |
NDF10N62Z
N-Channel Power MOSFET
620 V, 0.75 W
Features
? Low ON Resistance
? Low Gate Charge
? ESD Diode ? Protected Gate
? 100% Avalanche Tested
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
Rating Symbol NDF10N62Z Unit
V DSS
620 V
http://onsemi.com
R DS(ON) (MAX) @ 5 A
0.75 W
N ? Channel
D (2)
Drain ? to ? Source Voltage
Continuous Drain Current, R q JC (Note 2)
V DSS
I D
620
10
V
A
Continuous Drain Current R q JC ,
T A = 100 ° C (Note 2)
Pulsed Drain Current,
V GS @ 10 V
I D
I DM
5.7
36
A
A
G (1)
Power Dissipation, R q JC (Note 1)
Gate ? to ? Source Voltage
Single Pulse Avalanche Energy, I D = 10 A
ESD (HBM)
(JESD22 ? A114)
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T A = 25 ° C) (Figure 14)
P D
V GS
E AS
V esd
V ISO
36
± 30
300
3900
4500
W
V
mJ
V
V
TO ? 220FP
CASE 221D
STYLE 1
MARKING
DIAGRAM
S (3)
Peak Diode Recovery
Continuous Source Current (Body Diode)
dv/dt
I S
4.5 (Note 3)
10
V/ns
A
NDF10N62ZG
AYWW
Maximum Temperature for
Soldering Leads
Operating Junction and
Storage Temperature Range
T L
T J , T stg
260
? 55 to 150
° C
° C
Gate
Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 ″ sq. pad size,
(Cu area = 1.127 in sq [2 oz] including traces)
2. Limited by maximum junction temperature
3. I S ≤ 10 A, di/dt ≤ 200 A/ m s, V DD = 80% BV DSS
A
Y
WW
G
Drain
= Location Code
= Year
= Work Week
= Pb ? Free, Halogen ? Free Package
ORDERING INFORMATION
Device
NDF10N62ZG
Package
TO ? 220FP
(Pb ? Free,
Halogen ? Free)
Shipping
50 Units/Rail
? Semiconductor Components Industries, LLC, 2011
September, 2011 ? Rev. 1
1
Publication Order Number:
NDF10N62Z/D
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相关代理商/技术参数 |
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| NDF11N50Z | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 500 V, 0.52 |
| NDF11N50ZG | 功能描述:MOSFET 500V 0.52 OHM TO- 220FP RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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