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参数资料
| 型号： | NDF06N60ZH |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N CH 600V 7.1A TO220FP |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | * |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 100µA |
| 闸电荷(Qg) @ Vgs： | 47nC @ 10V |
| 输入电容 (Ciss) @ Vds： | * |
| 功率 - 最大： | 35W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220FP |
| 包装： | 管件 |
NDF06N60Z
THERMAL RESISTANCE
Parameter
Junction ? to ? Case (Drain)
Junction ? to ? Ambient Steady State (Note 3)
Symbol
R q JC
R q JA
Value
3.6
50
Unit
° C/W
3. Insertion mounted
ELECTRICAL CHARACTERISTIC S (T J = 25 ° C unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = 1 mA
Reference to 25 ° C,
I D = 1 mA
BV DSS
D BV DSS /
D T J
600
0.6
V
V/ ° C
Drain ? to ? Source Leakage Current
Gate ? to ? Source Forward Leakage
V DS = 600 V, V GS = 0 V
V GS = ± 20 V
25 ° C
150 ° C
I DSS
I GSS
1
50
± 10
m A
m A
ON CHARACTERISTICS (Note 4)
Static Drain ? to ? Source
On ? Resistance
V GS = 10 V, I D = 3.0 A
R DS(on)
0.98
1.2
W
Gate Threshold Voltage
Forward Transconductance
V DS = V GS , I D = 100 m A
V DS = 15 V, I D = 3.0 A
V GS(th)
g FS
3.0
3.9
5.0
4.5
V
S
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 5)
C iss
738
923
1107
pF
Output Capacitance (Note 5)
Reverse Transfer Capacitance
(Note 5)
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
C oss
C rss
90
15
106
23
125
30
Total Gate Charge (Note 5)
Q g
15.5
31
47
nC
Gate ? to ? Source Charge (Note 5)
Gate ? to ? Drain (“Miller”) Charge
(Note 5)
Plateau Voltage
Gate Resistance
V DD = 300 V, I D = 6.0 A,
V GS = 10 V
Q gs
Q gd
V GP
R g
3
8
6.3
17
6.4
3.2
9.5
24.5
V
W
RESISTIVE SWITCHING CHARACTERISTICS
Turn ? On Delay Time
t d(on)
13
ns
Rise Time
Turn ? Off Delay Time
Fall Time
V DD = 300 V, I D = 6.0 A,
V GS = 10 V, R G = 5 Ω
t r
t d(off)
t f
17
30
28
SOURCE ? DRAIN DIODE CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I S = 6.0 A, V GS = 0 V
V GS = 0 V, V DD = 30 V
I S = 6.0 A, di/dt = 100 A/ m s
V SD
t rr
Q rr
338
2.0
1.6
V
ns
m C
4. Pulse Width ≤ 380 m s, Duty Cycle ≤ 2%.
5. Guaranteed by design.
http://onsemi.com
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