参数资料
型号: NDF11N50ZG
厂商: ON Semiconductor
文件页数: 5/7页
文件大小: 0K
描述: MOSFET N-CH 500V 12A TO-220FP
产品目录绘图: MOSFET TO-220, TO-220AB
标准包装: 50
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 500V
电流 - 连续漏极(Id) @ 25° C: 12A
开态Rds(最大)@ Id, Vgs @ 25° C: 520 毫欧 @ 4.5A,10V
Id 时的 Vgs(th)(最大): 4.5V @ 100µA
闸电荷(Qg) @ Vgs: 69nC @ 10V
输入电容 (Ciss) @ Vds: 1645pF @ 25V
功率 - 最大: 36W
安装类型: 通孔
封装/外壳: TO-220-3 整包
供应商设备封装: TO-220FP
包装: 管件
其它名称: NDF11N50ZG-ND
NDF11N50ZGOS
NDF11N50Z
TYPICAL CHARACTERISTICS
100
10
V GS v 30 V
SINGLE PULSE
T C = 25 ° C
dc
100 m s 10 m s
1 ms
10 ms
1
0.1
0.01
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1 10 100
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
1000
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDF11N50Z
10
DUTY CYCLE = 0.5
1
0.1
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
R q JC = 3.2 ° C/W
Steady State
0.001
1E ? 06
1E ? 05
1E ? 04
1E ? 03
1E ? 02
1E ? 01
1E+00
1E+01
1E+02
1E+03
PULSE TIME (s)
Figure 13. Thermal Impedance (Junction ? to ? Case) for NDF11N50Z
LEADS
HEATSINK
0.110 ″ MIN
Figure 14. Isolation Test Diagram
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
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