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| 型号： | NDP6060L |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 48A TO-220AB |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品目录绘图： | MOSFET TO-220AB |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 48A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 毫欧 @ 24A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 60nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 2000pF @ 25V |
| 功率 - 最大： | 100W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 产品目录页面： | 1605 (CN2011-ZH PDF) |
April 1996
NDP6060L / NDB6060L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These logic level N-Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage applications such as
automotive, DC/DC converters, PWM motor controls,
and other battery powered circuits where fast switching,
low in-line power loss, and resistance to transients are
needed.
Features
48A, 60V. R DS(ON) = 0.025 ? @ V GS = 5V.
Low drive requirements allowing operation directly from logic
drivers. V GS(TH) < 2.0V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R DS(ON) .
TO-220 and TO-263 (D 2 PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted
Symbol
V DSS
V DGR
V GSS
Parameter
Drain-Source Voltage
Drain-Gate Voltage (R GS < 1 M ? )
Gate-Source Voltage - Continuous
NDP6060L
60
60
± 16
NDB6060L
Units
V
V
V
- Nonrepetitive (t P < 50 μs)
± 25
I D
Drain Current
- Continuous
48
A
- Pulsed
144
P D
T J ,T STG
T L
Total Power Dissipation @ T C = 25 ° C
Derate above 25 ° C
Operating and Storage Temperature
Maximum lead temperature for soldering
100
0.67
-65 to 175
275
W
W/ ° C
°C
°C
purposes, 1/8" from case for 5 seconds
? 1997 Fairchild Semiconductor Corporation
NDP6060L Rev. D / NDB6060L Rev. E
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NDP6060L | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N LOGIC TO-220 |
| NDP606A | 制造商:NSC 制造商全称:National Semiconductor 功能描述:N-Channel Enhancement Mode Power Fleid Effect Transistor |
| NDP606B | 制造商:NSC 制造商全称:National Semiconductor 功能描述:N-Channel Enhancement Mode Power Fleid Effect Transistor |
| NDP608A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDP608AE | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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