参数资料
型号: NDP6060L
厂商: Fairchild Semiconductor
文件页数: 2/12页
文件大小: 0K
描述: MOSFET N-CH 60V 48A TO-220AB
产品培训模块: High Voltage Switches for Power Processing
SMPS Power Switch
产品目录绘图: MOSFET TO-220AB
标准包装: 50
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 48A
开态Rds(最大)@ Id, Vgs @ 25° C: 20 毫欧 @ 24A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 60nC @ 5V
输入电容 (Ciss) @ Vds: 2000pF @ 25V
功率 - 最大: 100W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
产品目录页面: 1605 (CN2011-ZH PDF)
Electrical Characteristics (T C = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W DSS
Single Pulse Drain-Source Avalanche
V DD = 25 V, I D = 48 A
200
mJ
Energy
I AR
Maximum Drain-Source Avalanche Current
48
A
OFF CHARACTERISTICS
BV DSS
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V GS = 0 V, I D = 250 μA
V DS = 60 V, V GS = 0 V
V GS = 16 V, V DS = 0 V
V GS = -16 V, V DS = 0 V
T J = 125°C
60
250
1
100
-100
V
μA
mA
nA
nA
ON CHARACTERISTICS (Note 1)
V GS(th)
Gate Threshold Voltage
V DS = V GS , I D = 250 μA
1
2
V
T J = 125°C
0.65
1.5
R DS(ON)
Static Drain-Source On-Resistance
V GS = 5 V, I D = 24 A
0.025
?
V GS = 10 V, I D = 24 A
T J = 125°C
0.04
0.02
I D(on)
g FS
On-State Drain Current
Forward Transconductance
V GS = 5 V, V DS = 10 V
V DS = 10 V, I D = 24 A
48
10
A
S
DYNAMIC CHARACTERISTICS
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
1630
460
150
2000
800
400
pF
pF
pF
SWITCHING CHARACTERISTICS (Note 1)
t D(on)
t r
t D(off)
t f
Q g
Q gs
Q gd
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 30 V, I D = 48 A,
V GS = 5 V, R GEN = 15 ? ,
R GS = 15 ?
V DS = 48 V,
I D = 48 A, V GS = 5 V
15
320
49
161
36
8.2
21
30
500
100
300
60
nS
nS
nS
nS
nC
nC
nC
NDP6060L Rev. D / NDB6060L Rev. E
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